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| Categories | Mini Laser Diode | 
|---|---|
| Brand Name: | XINLAND | 
| Model Number: | XL-LD8505 | 
| Certification: | CE | 
| Place of Origin: | Xi'an Shaanxi China | 
| MOQ: | 100pcs | 
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram | 
| Supply Ability: | 1000 Dozen/Dozens per Day | 
| Delivery Time: | 7 days | 
| Packaging Details: | 1pcs/polybag,10pcs/inner box,100pcs/ctn | 
| Application:: | Laser rangefinder, confocal microscope | 
| Brand Name:: | XINLAND | 
| Type:: | Laser Diode | 
| Package Type:: | Surface Mount | 
| Max. Forward Voltage: | - | 
| Max. Reverse Voltage:-: | - | 
| Max. Forward Current:: | - | 
| Company Info. | 
| XINLAND LASER CO.,LTD | 
| View Contact Details | 
| Product List | 
XL-LD8505 Mini Laser Diode Laser Rangefinder, Confocal Microscope
● Features
- Low Operating Current
- High Efficiency
- High reliability
- High Precision Package
- Infrared Light Output : λp=850nm
- Package Type : TO-18(Ø5.6mm)
- Built-in Photo Diode for Monitoring Laser Diode
● Absolute Maximum Rating at TC=25℃
| Items | Symbol | Rating | Unit | 
| Optical Output Power | PO | 7 | mW | 
| LD Reverse Voltage | VLDR | 2 | V | 
| PD Reverse Voltage | VPDR | 30 | V | 
| PD Forward Current | IPDF | 10 | mA | 
| Operation Temperature | TOP | -10 ~ +60 | ℃ | 
| Storage Temperature | Tstg | -40 ~ +85 | ℃ | 
● Electrical and Optical Characteristics at TC=25℃
| Items | Symbol | Min | Typ. | Max | Unit | Condition | 
| Lasing Wavelength | λp | 845 | 850 | 855 | nm | PO=5mW | 
| Threshold Current | Ith | - | 10 | 20 | mA | - | 
| Operating Current | Iop | - | 20 | 30 | mA | PO=5mW | 
| Slope Efficiency | η | - | 0.7 | 0.9 | mW/mA | PO=2-5mW | 
| Monitor Current | Im | 0.2 | 0.4 | 0.5 | mA | PO=5mW,VPDR =5V | 
| Operating Voltage | Vop | - | 2.2 | 2.5 | V | PO=5mW | 
| Parallel divergence angle | θ‖ | 7 | 9 | 12 | deg | |
| Perpendicular divergence angle | θ⊥ | 25 | 32 | 40 | deg | |
| △θ‖ | - | - | ±2 | deg | ||
| Perpendicular FFP deviation angle | △θ⊥ | - | - | ±3 | deg | |
| Emission Point Accuracy | △X,△Y,△Z | - | - | ±60 | µm | 
LT-LD8505 Laser Diode Technical Data
● Internal Ciruit & Outline Dimensions (unit:mm)
| No. | Component | Material | Finish | 
| ① | Laser diode chip | AlGaInP/GaAlAs | - | 
| ② | Stem | Fe | Au plated | 
| ③ | Cap | 45 Alloy | Ni+Pd plated | 
| ④ | Window glass | Borosilicate glass | Typ. n=1.516 (λp = 830nm ) | 
| ⑤ | Lead pins | Kovar | Au plated | 
Absolute Maximum Ratings (Tc=25℃(Note 1))
| Parameter | Symbol | Value | Unit | 
| Optical power output (CW) (Note 2) | Po | 700 | mW | 
| Optical power output (Pulse) (Note 3) | Pp | 2,000 | mW | 
| Reverse voltage | Vrl | 2 | V | 
| Operating temperature (Case temperature) | Top(c) | -10 ~ +70 | ℃ | 
| Storage temperature | Tstg | -40 ~ +85 | ℃ | 
| Soldering temperature (Note 4) | Tsld | 350 | ℃ | 
(Note 1) Tc : Case temperature
(Note 2) CW : Continuous Wave Operation
(Note 3) Pulse : Pulse Operation (Pulse Width:1μs Duty:10%)
(Note 4) Soldering temperature means soldering iron tip temperature(The power 20W) while soldering.
Soldering position is 1.6mm apart from bottom edge of the case.(Immersion time: ≦3s)
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit | 
| Threshold current | Ith | - | - | 250 | T.B.D. | mA | 
| Operating current | Iop | Po=700mW  | - | 870 | T.B.D. | mA | 
| Operating voltage | Vop | - | 2 | T.B.D. | V | |
| Wavelength | λp | 840 | 850 | 860 | nm | |
| 1/e2 Intensity Angle(Parallel)(Note 2,3,4) | θ∥(1/e2) | T.B.D. | 13.5 | T.B.D. | ° | |
| 1/e2 Intensity Angle(Perpendicular)(Note 2,3) | θ⊥(1/e2) | T.B.D. | 40 | T.B.D. | ° | |
| Misalignment angle (Parallel) (Note 3) | Δθ∥(1/e2) | -5 | - | 5 | ° | |
| Misalignment angle (Perpendicular) (Note 3) | Δθ⊥(1/e2) | -5 | - | 5 | ° | |
| Differential efficiency | ηd | 600mW I(700mW)-I(100mW) | 0.7 | 1.0 | 1.3 | mW/mA | 
| Kink (Note 5) | K-LI | P1=140mW, P2=420mW P3=700mW | -10 | - | 10 | 
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