N Type , High Conductive GaSb Substrate , 3”, Dummy Grade

N Type , High Conductive GaSb Substrate , 3”, Dummy Grade

PAM-XIAMEN offers GaSb wafer – gallium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family.It has a lattice constant of about 0.61 nm. GaSb can be used for Infrared detectors,infrared LEDs and lasers and transistors, and thermophotovoltaic systems.

3" GaSb Wafer Specification

Optical properties of GaSb Wafer

Infrared refractive index
n = k1/2≈3.71·(1+8.25·10-5T)

Long-wave TO phonon energy hνTO = 27.78 meV (300 K).
Long-wave LO phonon energy hνLO = 28.89 meV (300 K).

	Refractive index n versus photon energy, 300 K
	Reflectivity versus photon energy, 300 K
	Intrinsic absorption coefficient near the intrinsic absorption edge in pure p-type samples. T(K): 1. 300, 2. 77, 3. 4.2
	Intrinsic absorption edge in p-type GaSb. Na = 3·1019 cm-3; T(K): 1. 215; 2. 140; 3. 77
	Intrinsic absorption edge at 77 K for different doping levels, p-GaSb. Na(cm-3): 1. 2.9·1017; 2. 5·1018; 3. 1.8·1019; 4. 3·1019

A ground state Rydberg energy RX1 = 2.8 meV.

	The absorption coefficient versus photon energy, T=300 K
	The impurity absorption at low photon energies, T=80 K Undoped sample (p = 2.4·1017 cm-3 at 300 K) Te added (p = 7.5·1016 cm-3) Se added (p = 4.1·1016 cm-3)

Are You Looking for an GaSb substrate?

PAM-XIAMEN is proud to offer Gallium antimonide substrate for all different kinds of projects. If you are looking for GaSb wafers, send us enquiry today to learn more about how we can work with you to get you the GaSb wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.

As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.