N Type , GaSb Crystal Wafer Substrate , 3”, Prime Grade, Epi-Ready

N Type , GaSb Crystal Wafer Substrate , 3”, Prime Grade, Epi-Ready

PAM-XIAMEN offers GaSb wafer – Gallium Antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or undoped in different orientation(111)or(100).Gallium antimonide (GaSb) is a crystalline compound made from the elements Gallium (Ga) and antimony (Sb).

3" GaSb Wafer Specification

Electrical properties of GaSb Wafer

Band structure and carrier concentration of GaSb Wafer include Basic Parameters,Mobility and Hall Effect,Transport Properties in High Electric Fields
,Impact Ionization,Recombination Parameters

Basic Parameters

Mobility and Hall Effect

	Electron Hall mobility versus temperature for different doping levels. 1. Nd= 1.7·1018 cm-3 2. Nd= 2.8·1017 cm-3 Broken curves represent the experimental data. Continuous curves represent theoretical calculations.
	Electron Hall mobility versus electron concentration no. T=77 K. Open circles represent measurements with a group of samples having approximately the same residual acceptor concentrations Na. Full symbols:specimens with lower residual acceptor concentrations. Solid lines represent the theoretical calculations for different values of compensating acceptor densities - either singly (Na-) or doubly (Na--) ionized. 1. Na- = 1.2·1017 or Na-- = 0.4·1017 cm-3 2. Na- =2.85·1017 or Na-- =0.95·1017 cm-3 3. Na- = 4.5·1017 or Na-- = 1.5·1017 cm-3
	Hole Hall mobility versus temperature at different compensation levels. 1. Na= 1.39·1017 cm-3; Nd= 9·1015 cm-3; 2. Na= 1.3·1017 cm-3; Nd= 9.5·1016 cm-3; 3. Na= 1.1·1017cm-3; Nd= 9.5·1016 cm-3
	Temperature dependence of hole Hall mobility. MBE technique. Hole concentration at 300 K: 1. - 2.28·1016 cm-3; 2. - 1.9·1019 cm-3.
	The hole Hall mobility versus hole concentration, 300 K. Experimental data are taken from five different papers

Transport Properties in High Electric Fields

	Calculated field dependence of the electron drift velocity, 300 K.
	Calculated (solid) end experimental (points) current density dependencies versus the electric field, 300 K.
	Fraction of electrons in Γ, L, X valleys as a function of electric field,300 K n=6.8·1016 cm-3
	Electron temperature as a function of the electric field, T=77 K. full and open circle - experimental data curve are calculated

Impact Ionization

	The dependences of αi and βi> versus 1/F. T=77 K Open symbols : F (111). Filled symbols : F (100).
	The dependences of αi and βi versus 1/F). T=300 K F (100).

Recombination Parameters

	Radiative lifetime versus donor concentration, T =77 K, GaSb(Te). To extract these dependences from experimental data the values of internal quantum efficiency η were taken: open circles η=0.8; filled circles η=1;
	Nonradiative lifetime versus donor concentrations, T =77K, GaSb(Te). open circles η= 0.8; filled circles η= 1; (Agaev et al. [1984]).
	Electron radiative (triangles) and nonradiative (squares) lifetime versus acceptor concentration, p-GaSb, T=77 K.
	Electron lifetime versus temperature at different acceptor concentrations. Na (cm-3): 1. 5·1018; 2. 2.2·1019; 3. 3.5·1019.

Are You Looking for an GaSb Wafer?
PAM-XIAMEN is your go-to place for everything wafers, including GaSb wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.

As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.