HXY4409 30V P-Channel MOSFET

Categories	Mosfet Power Transistor
Brand Name:	Hua Xuan Yang
Model Number:	HXY4409
Certification:	RoHS、SGS
Place of Origin:	ShenZhen China
MOQ:	1000-2000 PCS
Price:	Negotiated
Payment Terms:	L/C T/T Western Union
Supply Ability:	18,000,000PCS / Per Day
Delivery Time:	1 - 2 Weeks
Packaging Details:	Boxed
Product name:	Mosfet Power Transistor
VDS:	30V
APPLICATION:	High Frequency Circuits
FEATURE:	Low Gate Charge
VGS:	30V

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

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HXY4409 30V P-Channel MOSFET

Description

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C.

D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

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HXY4409 30V P-Channel MOSFET

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