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N - CHANNEL Zener Protected SuperMESH ⑩ Power Mosfet Transistor STP10NK80ZFP

Categories 3 Pin Transistor
Brand Name: Anterwell
Model Number: STP10NK80ZFP
Certification: new & original
Place of Origin: original factory
MOQ: 10pcs
Price: Negotiate
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 7200pcs
Delivery Time: 1 day
Packaging Details: Please contact me for details
Drain-source Voltage: 800 V
Drain-gate Voltage: 800 V
Gate- source Voltage: ± 30 V
Peak Diode Recovery voltage slope: 4.5 V/ns
Operating Junction Temperature: -55 to 150°C
Storage Temperature: -55 to 150°C
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N - CHANNEL Zener Protected SuperMESH ⑩ Power Mosfet Transistor STP10NK80ZFP


STP10NK80Z - STP10NK80ZFP
STW10NK80Z

N-CHANNEL 800V - 0.78Ω - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH™Power MOSFET

TYPEVDSSRDS(on)IDPw

STP10NK80Z

STP10NK80ZFP

STW10NK80Z

800 V

800 V

800 V

< 0.90 Ω

< 0.90 Ω

< 0.90 Ω

9 A

9 A

9 A

160 W

40 W

160 W


■ TYPICAL RDS(on) = 0.78 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY

DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES
■ DC-AC CONVERTERS FOR WELDING, UPS AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

SymbolParameterValueUnit
STP10NK80ZSTP10NK80ZFPSTW10NK80Z
VDSDrain-source Voltage (VGS = 0)800V
VDGRDrain-gate Voltage (RGS = 20 kΩ)800V
VGSGate- source Voltage± 30V
IDDrain Current (continuous) at TC = 25°C99 (*)9A
IDDrain Current (continuous) at TC = 100°C66 (*)6A
IDM (•)Drain Current (pulsed)3636 (*)36A
PTOTTotal Dissipation at TC = 25°C16040160W
Derating Factor1.280.321.28W/°C
VESD(G-S)Gate source ESD(HBM-C=100pF, R=1.5KΩ)4KV
dv/dt (1)Peak Diode Recovery voltage slope4.5V/ns
VISOInsulation Withstand Voltage (DC)-2500-V

Tj

Tstg

Operating Junction Temperature

Storage Temperature

-55 to 150

-55 to 150

°C

(•) Pulse width limited by safe operating area
(1) ISD ≤9A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed




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