| Sign In | Join Free | My futurenowinc.com |
|
| Categories | Mosfet Power Module |
|---|---|
| Brand Name: | MOTOROLA |
| Model Number: | MHL21336 |
| Certification: | Original Factory Pack |
| Place of Origin: | Malaysia |
| MOQ: | 5pcs |
| Price: | Negotiation |
| Payment Terms: | Western Union,PayPal, T/T |
| Supply Ability: | 1200PCS |
| Delivery Time: | 1 Day |
| Packaging Details: | please contact me for details |
| Features1: | Third Order Intercept: 45 dBm Typ |
| Features2: | Power Gain: 31 dB Typ (@ f = 2140 MHz) |
| Features3: | Input VSWR 1.5:1 |
| Features4: | Excellent Phase Linearity and Group Delay Characteristics |
| Features5: | Ideal for Feedforward Base Station Applications |
| Features6: | N Suffix Indicates Lead-Free Terminations |
| Company Info. |
| Anterwell Technology Ltd. |
| View Contact Details |
| Product List |
MHL21336 Mosfet Power Module IC Parts 3G Band RF Linear LDMOS Amplifier
3G Band RF Linear LDMOS Amplifier
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital CDMA modulation systems.
• Third Order Intercept: 45 dBm Typ
• Power Gain: 31 dB Typ (@ f = 2140 MHz)
• Input VSWR 1.5:1
Features
• Excellent Phase Linearity and Group Delay Characteristics
• Ideal for Feedforward Base Station Applications
• N Suffix Indicates Lead-Free Terminations


| Rating | Symbol | Value | Unit | |
| DC Supply Voltage | VDD | 30 | Vdc | |
| RF Input Power | Pin | +5 | dBm | |
| Storage Temperature Range | Tstg | - 40 to +100 | °C |

|