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| Categories | Ceramic Substrate |
|---|---|
| Brand Name: | ZMSH |
| Model Number: | Bonding-Specific SiC Vacuum Chuck |
| Certification: | rohs |
| Place of Origin: | CHINA |
| MOQ: | 5 |
| Price: | by case |
| Payment Terms: | T/T |
| Delivery Time: | 2-4 weeks |
| Packaging Details: | package in 100-grade cleaning room |
| Material Purity: | SiC ≥ 99.999% |
| Coefficient of Thermal Expansion: | ~4.5×10⁻⁶/℃ |
| Elastic Modulus: | >400 GPa |
| Surface Flatness: | ≤1 μm |
| Surface Roughness (Ra): | ≤0.01 μm |
| Adsorption Groove Accuracy: | ±5 μm |
| Company Info. |
| SHANGHAI FAMOUS TRADE CO.,LTD |
| Verified Supplier |
| View Contact Details |
| Product List |
Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm
A Bonding-Specific Silicon Carbide (SiC) Vacuum Chuck is a high-performance ceramic adsorption component manufactured using reaction sintering or chemical vapor deposition (CVD) processes, specifically designed for semiconductor chip bonding processes. Its core function is to stably adsorb and secure wafers during bonding via vacuum negative pressure or electrostatic adsorption principles, ensuring micrometer or even sub-micrometer-level precise alignment and interconnection between chips and substrates or interposers under high-temperature and pressurized conditions. It employs ultra-high-purity silicon carbide ceramic as the base material, utilizing precisely engineered porous structures or surface electrode designs to provide uniform adsorption force during bonding, preventing wafer slippage or deformation.
| Parameter Category | Parameter Name | Typical Value/Range |
| Material Characteristics | Material Purity | SiC ≥ 99.999% |
| Coefficient of Thermal Expansion | ~4.5×10⁻⁶/℃ | |
| Thermal Conductivity | ~120 W/(m·K) (room temperature) | |
| Elastic Modulus | >400 GPa | |
| Bulk Density | ≥3.1 g/cm³ | |
| Functional Characteristics | Surface Flatness | ≤1 μm |
| Surface Roughness (Ra) | ≤0.01 μm | |
| Adsorption Groove Accuracy | ±5 μm | |
| Operating Temperature | Room temperature~400°C (electrostatic type) |
Bonding-specific SiC vacuum chucks are primarily used in the following high-end manufacturing scenarios:
1. SiC Ceramic Vacuum Chuck Flip-Chip Bonding Mirror Polishing High-Stiffness
2. Customized SiC Ceramic Guide Rail Zero-Wear Corrosion-Resistant High-Speed
Q1: Why choose a silicon carbide (SiC) vacuum chuck for bonding processes?
A1: SiC vacuum chucks are chosen for their exceptional thermal stability, ultra-low thermal expansion, and high stiffness, which ensure micron-level alignment accuracy and prevent wafer deformation during high-temperature bonding.
Q2: What are the primary applications of SiC vacuum chucks in semiconductor manufacturing?
A2: They are primarily used in advanced semiconductor packaging processes such as chip-to-wafer (C2W) and wafer-to-wafer (W2W) bonding, MEMS sensor encapsulation, and power device interconnection (e.g., SiC/GaN module sintering), where high temperature, precision alignment, and contamination control are critical.
Tags: #Bonding-Specific SiC Vacuum Chuck, #Customized, #Wafer
Adsorption, #Surface Flatness ≤1μm
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