| Absolute Ratings |
| Peak repetitive off-state voltage | VDRM / VRRM | 800 | V | (Tj = -40 to 125C, Full sine wave, 50 to 60 Hz; Gate open) |
| On-stage RMS current | IT(RMS) | 12 | A | (Full sine wave, TC = 100C) |
| Peak non-repetitive surge current | ITSM | 100 | A | (one full cycle 60 HZ, Tj = 25C) |
| Circuit fusing consideration | IT | 41.5 | AS | (t = 8.3ms) |
| Operating junction temperature range | Tj | -40 to +125 | C | |
| Storage temperature range | TSTG | -40 to +150 | C | |
| Thermal Characteristics |
| Thermal resistance from junction to case, without heatsink | Rth(j-C) | Max 12 | C/W | (without heatsink, unidirectional, continuous & full cycle) |
| Junction to ambient, without heatsink | Rth(j-a) | Typ 35 | C/W | (without heatsink, unidirectional, continuous & full cycle) |
| Maximum lead temperature for soldering purposes | TL | Max 260 | C | (1/8 form case for 10 seconds) |
| Static Characteristics |
| Threshold Voltage | Vto | -- | -- | 0.95 | V (Tj = 125C) |
| Dynamic resistors | Rd | -- | -- | 30 | m (Tj = 125C) |
| Peak repetitive forward or reverse blocking current | IDRM / IRRM | -- | -- | 5 | uA (Tj = 25C, VAK = rated VDRM and VRRM, gate open) |
| Peak repetitive forward or reverse blocking current | IDRM / IRRM | -- | -- | 0.5 | mA (Tj = 125C, VAK = rated VDRM and VRRM, gate open) |
| ON Characteristics |
| Peak forward on-state voltage | VTM | 1.5 Max | 1.5 Max | V | (ITM = 12 A @ Tj = 25C) |
| Gate trigger voltage | VGD | 0.25 Min | 0.25 Min | V | (VD= VDRM , RL=100, Tj=125C) |
| Gate trigger current | IGT1 / IGT2 / IGT3 | 10 / 10 / 10 Max | 35 / 35 / 35 Max | mA | (VAK = 12V, RL=100) |
| Gate trigger voltage | VGT1 / VGT2 / VGT3 | 1 Max | 1 Max | V | (VAK = 12V, RL=100) |
| Holding current | IH1 / IH3 | 10 Max | 50 Max | mA | (VAK = 12V, RL=100) |
| Latching current | IL1 / IL2 / IL3 | 20 / 30 / 20 Max | 50 / 80 / 50 Max | mA | (VAK = 12V, RL=100) |
| Critical rate of rise of on-state current | dI/dt(s) | 50 Max | 50 Max | A/us | (Tj = 125C) |
| Critical rate of rise of off-state voltage | dV/dt | 500 Max | 3000 Max | V/us | (VD = 67% VDRM, gate open, Tj = 125C) |
| Critical rate of rise of on-state current | dI/dt(c) | 2 Max | 8 Max | A/ms | (Without snubber, Tj = 125C) |
| Critical rate of rise of on-state current | di/dt(c) | 10 Max | 40 Max | A/ms | (125C, Gate open, 10V/dt) |