Silicon Carbide (SiC) Trays & Plates: High-Performance Wafer Holders for ICP Etching in LED Manufacturing

Overview:

Silicon Carbide (SiC) trays and plates are precision-engineered wafer carriers designed specifically for Inductively Coupled Plasma (ICP) etching processes within the LED industry. SiC stands out as a superior material due to its exceptional thermal management, outstanding corrosion resistance, and remarkable mechanical stability at extreme temperatures. These properties make our SiC trays the ideal solution for demanding semiconductor applications, ensuring process integrity and high yield.

Key Material Advantages:

• Superior Thermal Conductivity: For efficient heat dissipation and uniform temperature distribution across the wafer.

• Exceptional Plasma & Corrosion Resistance: Withstands harsh chemical environments and plasma shock for extended service life.

• High Mechanical Strength at Elevated Temperatures: Maintains structural integrity and dimensional stability under high thermal loads.

• Low Thermal Expansion: Minimizes the risk of warping or stress on wafers during thermal cycling.

Silicon Carbide (SiC) Material Properties

Comparative Specifications: SiC Tray Types

Critical Features for ICP Etching:

• Excellent Thermal Conductivity: Ensures rapid heat transfer and minimizes thermal gradients.

• Superior Resistance to Plasma Shock: Guarantees long-term durability and process consistency.

• Excellent Temperature Uniformity: Critical for achieving uniform etch rates and high device performance across the entire wafer.

Primary Applications:

• Semiconductor Processing: Ideal as wafer carriers, susceptors, and process fixtures in CVD, MOCVD, and epitaxy.

• LED Manufacturing: Widely used as robust and reliable wafer holders for ICP etching processes in the production of Light-Emitting Diodes.

• Advanced Coatings & Components: Suitable for various industrial applications requiring high thermal and chemical stability.

We supply a comprehensive range of standard and custom-sized Silicon Carbide trays, plates, and other specialized SiC components to meet the precise needs of the semiconductor and LED industries.

Founded in 2017, Kegu is a leading advanced materials developer based in China’s Xixian New District, Qinhan New City—strategically positioned near major transport links including the Xianyang East Expressway. With a registered capital of 35.5 million RMB (approx. 5 million USD), we operate from a modern 5-acre production facility where we combine materials science innovation with precision manufacturing.

We specialize in engineering high-performance ceramic components for mission-critical industries such as New Energy, Chemical Processing, Pharmaceuticals, and Aerospace. Our products are known for exceptional thermal stability, excellent chemical resistance, and outstanding mechanical properties.

Leveraging a strong R&D foundation, we deliver customized ceramic solutions that meet stringent international quality standards while enhancing operational performance and reducing lifecycle costs for OEMs and innovators worldwide. At Kegu, we’re solving tomorrow’s material challenges—today.