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| Categories | Silicon Nitride Ceramic |
|---|---|
| Brand Name: | KEGU |
| Place of Origin: | China |
| Price: | 200-500 yuan/kg |
| Payment Terms: | L/C,D/A,D/P,T/T,Western Union,MoneyGram |
| Supply Ability: | 2,000 pcs/month |
| Packaging Details: | Strong wooden box for Global shipping |
| Model Number: | Customizable |
| Material: | Silicon Nitride |
| Composition:SiC: | ＞85% |
| Color: | Black |
| Density: | 3.20-3.26g/cm3 |
| Max. Service Temp: | 1450℃ |
| Flexural Strength: | 250MPa |
| Sample: | Customizable |
| Chemical Stability: | High |
| Apparent Porosity: | 0-0.1% |
| Elastic Modulus: | 300-320GPa |
| Compression Strength: | >1500MPa |
| Vickers Hardness(HV0.5): | 15-16GPa |
| Thermal Conductivity: | 20-25W/(m.k) |
| Specific Resistivity: | 10^14Ω·cm |
| Company Info. |
| Shaanxi KeGu New Material Technology Co., Ltd |
| Verified Supplier |
| View Contact Details |
| Product List |
High-performance silicon nitride ceramic materials developed for the aluminum industry has significantly improved thermal and mechanical properties than similar products. On this basis, the "L-shaped high thermal conductivity submerged heating "Appliance" will bring revolutionary progress to aluminum industrial equipment.
The domestically pioneered grouting-formed silicon nitride pouring spoon and crucible maximizes the thermal shock resistance and non-stick aluminum properties of silicon nitride materials, and should be the ultimate solution for aluminum industry pouring spoons and crucibles.
Advantage:
Compared with the other material crucible, the service life is greatly extended.
Silicon Nitride Related Data
| Main component | 99%Al2O3 | S-SiC | ZrO2 | Si3N4 | ||
| Physical Property | Density | g/cm3 | 3.9 | 3.1 | 6 | 3.2 |
| Water Absorption | % | 0 | 0.1 | 0 | 0.1 | |
| Sinter Temperature | °C | 1700 | 2200 | 1500 | 1800 | |
| Mechanical Property | Rockwell Hardness | HV | 1700 | 2200 | 1300 | 1400 |
| Bend Strength | kgf/mm2 | 3500 | 4000 | 9000 | 7000 | |
| Compression Intensity | Kgf/mm2 | 30000 | 20000 | 20000 | 23000 | |
| Thermal Property | Maximum working temperature | °C | 1500 | 1600 | 1300 | 1400 |
| thermal expansion coefficient 0-1000°C | /°C | 8.0*10-6 | 4.1*10-6(0-500°C) | 9.5*10-6 | 2.0*10-6(0-500°C) | |
| 5.2*10-6(500-1000°C) | 4.0*10-6(500-1000°C) | |||||
| Thermal Shock resistance | T(°C) | 200 | 250 | 300 | 400-500 | |
| Thermal Conductivity | W/m.k(25°C | 31 | 100 | 3 | 25 | |
| 300°C) | 16 | 100 | 3 | 25 | ||
| Electrical Property | Resisting rate of Volume | ◎.cm | ||||
| 20°C | >1012 | 106-108 | >1010 | >1011 | ||
| 100°C | 1012-1013 | – | – | >1011 | ||
| 300°C | >1012 | – | – | >1011 | ||
| Insulation Breakdown Intensity | KV/mm | 18 | semiconductor | 9 | 17.7 | |
| Dielectric Constant (1 MHz) | (E) | 10 | – | 29 | 7 | |
| Dielectric Dissipation | (tg o) | 0.4*10-3 | – | – | – | |
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