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| Categories | MOS Transistor |
|---|---|
| Model Number: | SIR422DP-T1-GE3 |
| Place of Origin: | original |
| Brand Name: | original |
| Price: | CN¥1.44/pieces |
| Description: | MOSFETs, - |
| Operating Temperature: | -55°C ~ 150°C, -55°C ~ 150°C(TJ) |
| Series: | SIR |
| Type: | MOSFET , Transistors |
| D/C: | 23+, 23+ |
| Package Type: | Surface Mount |
| Application: | General Purpose, All kinds of Electronic Products |
| Supplier Type: | Other |
| Cross Reference: | - |
| Media Available: | Photo |
| Current - Collector (Ic) (Max): | - |
| Voltage - Collector Emitter Breakdown (max): | - |
| Vce Saturation (Max) @ Ib, Ic: | - |
| Current - Collector Cutoff (Max): | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | - |
| Power - Max: | 5W(Ta),34.7W(Tc) |
| Frequency - Transition: | - |
| Mounting Type: | Surface Mount, Surface mount |
| Package / Case: | QFN8 |
| Resistor - Base (R1): | - |
| Resistor - Emitter Base (R2): | - |
| FET Type: | N-channel |
| FET Feature: | - |
| Drain to Source Voltage (Vdss): | - |
| Current - Continuous Drain (Id) @ 25°C: | 20.5 A |
| Rds On (Max) @ Id, Vgs: | 6.6 m @ 20A, 10V |
| Vgs(th) (Max) @ Id: | 2.5V @ 250A |
| Gate Charge (Qg) (Max) @ Vgs: | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1785 pF @ 20 V |
| Frequency: | - |
| Current Rating (Amps): | - |
| Noise Figure: | - |
| Power - Output: | - |
| Voltage - Rated: | - |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs (Max): | ±20V |
| IGBT Type: | FET,MOSFET |
| Configuration: | Single Phase |
| Vce(on) (Max) @ Vge, Ic: | - |
| Input Capacitance (Cies) @ Vce: | 1785 pF @ 20 V |
| Input: | - |
| NTC Thermistor: | - |
| Voltage - Breakdown (V(BR)GSS): | 40 V |
| Current - Drain (Idss) @ Vds (Vgs=0): | - |
| Current Drain (Id) - Max: | - |
| Voltage - Cutoff (VGS off) @ Id: | - |
| Resistance - RDS(On): | - |
| Voltage - Output: | - |
| Voltage - Offset (Vt): | - |
| Current - Gate to Anode Leakage (Igao): | - |
| Current - Valley (Iv): | - |
| Current - Peak: | - |
| Transistor Type: | MOSFET |
| Product Name: | SIR422DP-T1-GE3 |
| Original fromm: | Original Brand |
| Detalis: | Please contact us |
| Shipping by: | DHL\UPS\Fedex\EMS\HK Post |
| Payment: | Paypal Western Union t/t |
| Condition: | Brand Newand Original |
| Warranty: | 365 Days Warranty |
| Quality: | Original High-quality |
| Voltage: | - |
| Applications: | standard |
| Company Info. |
| Shenzhen Anxinruo Technology Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
Product type: | Single field effect transistor MOSFET |
Model Number: | SIR422DP-T1-GE3 |
Series: | SIR |
Vendor: | VISHAY |
Packaging: | QFN8 |
Install the style: | Surface mount |
New and original |
Contact Person: | Mr.Guo | ||
Tel: | +86 13434437778 | ||
Email: | XCDZIC@163.COM | ||
Wechat: | 0086 13434437778 | ||
Quantity(pieces) | 1-100 | 100-1000 | 1000-10000 |
Lead time (days) | 3-5 | 5-8 | To be negotiated |
















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