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1inch 2inch Beta Coefficient Ga2O3 Gallium Oxide Wafer Substrate Dsp Ssp

Categories Semiconductor Substrate
Brand Name: ZMKJ
Model Number: Beta Coefficient-Ga2O3
Place of Origin: China
MOQ: 5pcs
Price: by case
Payment Terms: T/T, Western Union, paypal
Supply Ability: 50pcs/month
Delivery Time: in 30days
Packaging Details: single wafer container in cleaning room
layer: GaN template
layer thickness: 1-5um
Melt point (°C): 1725°C
Conductivity: Semi-insulating, Fe-doped,Mg-doped
Electrical Resistivity: >1E6 Ohm-cm
Density: 5.95 g/cm3
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1inch 2inch Beta Coefficient Ga2O3 Gallium Oxide Wafer Substrate Dsp Ssp

Gallium Oxide Epiwafers Beta Coefficient-Ga2O3 Gallium Oxide Wafer Doped Mg Fe3+ Square Substrate Dsp Ssp


Gallium oxide (Ga2O3) has a large band-gap energy, and it can be grown from a melt source. As a result, large, high-quality single-crystal substrates can be manufactured at low cost. These characteristics make Ga2O3 a promising material for next-generation power electronics. It also has the high advantage of reducing the series resistance of the blue LED or UVB LED.


Properties of Ga2O3

β-Ga2O3 is a gallium oxide compound, which is a wide band gap semiconductor material. Its crystal structure belongs to the hexagonal crystal system, with high electron mobility and large band width, so it has a wide application prospect. Here are some details about β-Ga2O3:

Physical properties:

Crystal structure: hexagonal crystal system

Density: 5.88 g/cm³

Lattice constant: a = 0.121 nm, c = 0.499 nm

Melting point: 1725 °C

Refractive index: 1.9-2.5

Transparent wavelength range: 0.23-6.0μm

Electrical properties:

Band width: 4.8eV

Electron mobility: 200-600 cm²/Vs

Leakage rate: 10^ -5-10 ^-10 A/cm²

REDOX potential: 2.5V vs. NHE

The Application of Ga2O3

Because of its wide band gap and high electron mobility, β-Ga2O3 has a wide application prospect in power electronics, photoelectronics, solar cells and other fields. Specific applications include:


Ultraviolet detectors and lasers

High power MOSFETs and Schottky diodes

High temperature sensor and potential sensor

Solar cells and LED materials

β-Ga2O3 still faces some challenges in preparation and application, such as crystal growth, impurity control, device fabrication, etc. However, with the continuous development of technology, the application prospect of β-Ga2O3 is still very broad.

Gallium oxide, Ga2O3 single crystal2inch substrates10*15mm substrates
Orientation(-201)(-201)(-201)(010)(010)(010)
DopantSnUn-dopedSnSnUn-dopedFe
Conductivityn-typen-typen-typen-typen-typeInsulation(>1010
Nd-Na(cm-3)5E17~9E185E17 or less5E17~9E181E18~9E181E17~5E17-
DimentionsA-B(mm)50.8±0.350.8±0.315±0.315±0.315±0.315±0.3
C-D(mm)41~49.841~49.810±0.310±0.310±0.310±0.3
Thickness0.68±0.020.68±0.020.68±0.020.5±0.020.5±0.020.5±0.02
Reference(mFig.1Fig.1Fig.2Fig.3Fig.3Fig.3
Offset angle
(degree)
[010]:0±0.4[010]:0±0.4[010]:0±0.4丄[102]:0±1丄[102]:0±1丄[102]:0±1
[102]:0.7±0.4[102]:0.7±0.4[102]:0.7±0.4[102]:0±1[102]:0±1[102]:0±1
FWHM(arcsec)[010]:150 or less[010]:150 or less[010]:150 or less丄[102]:150 or丄[102]:150 or丄[102]:150 or
[102]:150 or less[102]:150 or less[102]:150 or less[102]:150 or less[102]:150 or less[102]:150 or less
SurfaceFrontCMPCMPCMPCMPCMPCMP
BackRoughRoughRoughRoughRoughRough
ItemSpecification
Orientation-100
DopedUIDMgFe
Electrical parameter1 ×1017~3×1018cm-3≥1010 Ω ·cm≥1010 Ω ·cm
Twin-crystal swing curve half-height width≤150
Dislocation density<1×10 5 cm-2
DimensionA-BC-D厚度
10mm10.5mm0.5(±0.02)mm
5mm10mm0.5(±0.02)mm
FlatnessThe long side is [010] Orientation
SurfaceDSP/SSP
Ra<0.5nm
Mis<±1.


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