N-Channel Enhancement Mode High Power IGBT For Frequency Converter

Multifunctional Low Voltage MOSFET for Power Management

• Positive temperature coefficient

• High speed switching

• Low collector to emitter saturation voltage

• Easy parallel switching capability

• Short circuit withstands time 10μs

• High ruggedness performance

APPLICATIONS

• Portable power station

• Motor driver

Package:

TO-247

    Guangdong Lingxun Microelectronics (Zhongxin semiconductor ) Co., Ltd.,is a national high-tech enterprise that focuses on the research and development, packaging testing, and sales of power semiconductor devices.
Our factory currently has more than 180 employees and more than 10000 square meters area.We provide over 600 KK high-quality power semiconductor device per annum.
    We provide customers with high-quality, high stability and reliablility power semiconductor devices and comprehensive technical support.Existing main production lines include Schottky, low VF Schottky,Fast Recovery Diodes, High Voltage Mosfet, Medium and Low Voltage Mosfet, Super Junction Mosfet, IGBT, SiC shottkly Barrier Diode and Sic Mosfet. Widely used in various fields such as power adapters,LED lighting, brushless motors, lithium battery management, inverters,energy storage and charging pile, etc.
    Lingxun Microelectronics is committed to becoming an excellent manufacturer of power semiconductor devices,assist in the nationalization of power semiconductor core devices.
    We cherishing every trust from customers, employees, and partners, and strive to provide sincere and enthusiastic service to customers!
    Welcome you to visit our factory!