Sign In | Join Free | My futurenowinc.com
futurenowinc.com
Products
Search by Category
Home >

NVH4L080N120SC1

Categories Semiconductor IC
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature: -
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-247-4
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 20V
Package: Tube
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -15V
Product Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
Mounting Type: Through Hole
Series: Automotive, AEC-Q101
Supplier Device Package: TO-247-4L
Mfr: onsemi
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Power Dissipation (Max): 170mW (Tc)
Technology: SiCFET (Silicon Carbide)
Base Product Number: NVH4L080
Description: SICFET N-CH 1200V 29A TO247-4
  • Haven't found right suppliers
  • Our buyer assistants can help you find the most suitable, 100% reliable suppliers from China.
  • And this service is free of charge.
  • we have buyer assistants who speak English, French, Spanish......and we are ready to help you anytime!
Submit Buying Request
  • Product Details
  • Company Profile

NVH4L080N120SC1

N-Channel 1200 V 29A (Tc) 170mW (Tc) Through Hole TO-247-4L
Quality NVH4L080N120SC1 for sale
Send your message to this supplier
 
*From:
*To: WONDERFUL SEMICONDUCTOR(HONG KONG)CO.,LIMITED
*Subject:
*Message:
Characters Remaining: (0/3000)
 
Inquiry Cart 0