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1 3 M Inp Substrate

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1 3 m inp substrate

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InP DFB Epiwafer Wavelength 1390nm InP Substrate 2 4 6 Inch For 2.5~25G DFB Laser Diode

InP DFB Epiwafer wavelength 1390nm InP substrate 2 4 6 inch for 2.5~25G DFB laser diode InP DFB Epiwafer InP substrate's brief InP DFB Epiwafers designed for 1390nm wavelength applications are critical components used in high-speed optical communication systems, particularly for 2.5 Gbps to 25 Gbps DFB (Distributed Feedback) laser diodes. These wafers are grown on Indium Phosphide (InP) substrates......

SHANGHAI FAMOUS TRADE CO.,LTD

Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799

InP FP Epiwafer InP Substrate N/p Type 2 3 4 Inch With Thickeness Of 350-650um For Optical Net Work

InP FP epiwafer InP substrate n/p type 2 3 4 inch with thickeness of 350-650um for optical net work InP epiwafer's Overview Indium Phosphide (InP) Epiwafer is a key material used in advanced optoelectronic devices, particularly Fabry-Perot (FP) laser diodes. InP Epiwafers consist of epitaxially grown layers on an InP substrate, designed for high-performance applications in telecommunications, data centers, and sensing technologies. InP......

SHANGHAI FAMOUS TRADE CO.,LTD

Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799

P Type , InP Substrate With Low Etch Pit Density(EPD) , 3”, Prime Grade

...InP Substrate With Low Etch Pit Density(EPD) , 3”, Prime Grade PAM-XIAMEN provides single crystal InP(Indium phosphide) wafer for micro-electronic ( HBT/ HEMT ) and opto-electronic industry ( LED / DWDM / PIN / VCSELs ) in diameter up to 6 inch. Indium phosphide ( InP ) crystal is formed by two elements , Indium and Phosphide , growth by Liquid Encapsulated Czochralski ( LEC ) method or VGF method . InP......

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Address: #506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China

Dia 3 Inch 4 Inch Technical Ceramic Parts InP Based Epi Wafer

InP Based Epi Wafer We provides MBE / MOCVD epitaxial growth of custom structure on InP substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 2" to Ø 4” . With our extensive MOCVD experience , we can grow binary alloy ( InP ) or ternary alloy ( InGaAs , InAlAs , InGaAsP ) on InP substrate......

HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

Address: No. 26, Dongqing Street, High-tech Zone, Zhengzhou ,Henan, China

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