Through Hole IMZ120R090M1H N-Channel Discrete Semiconductor Transistors
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... MOSFET Transistors. Specification Of IMZ120R090M1H Part Number IMZ120R090M1H Product Status Active FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200 V Current - Continuous Drain (Id) @ 25°C 26A (......
ShenZhen Mingjiada Electronics Co.,Ltd.
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N Channel Field Effect Transistor Mosfet Discrete Semiconductors IRFS3207ZTRRPBF
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... MOSFET MOSFT 75V 170A 4.1mOhm 120nC App Characteristics Features High Efficiency Synchronous Rectification in SMPS Uninterruptible Power ......
KZ TECHNOLOGY (HONGKONG) LIMITED
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Low Gate Charge Mosfet Power Transistor For Inverter Systems Management
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...Mosfet Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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Low Gate Charge Mosfet Power Transistor For Inverter Systems Management
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...Mosfet Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet......
Beijing Silk Road Enterprise Management Services Co.,LTD
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TK30E06N1 S1X Discrete Semiconductors Transistor IC Chip MOSFET Through Hole
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...Semiconductors Transistors MOSFET Through Hole . Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel...
Walton Electronics Co., Ltd.
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AO6405 MOSFET Power Electronics P-Channel 30V Surface Mount Discrete Semiconductors Transistors Package 6-TSOP
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AO6405 MOSFET Power Electronics P-Channel 30V Surface Mount Discrete Semiconductors Transistors Package 6-TSOP FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 5A (Ta) Drive ......
Shenzhen Sai Collie Technology Co., Ltd.
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FDS9435A Power Mosfet Transistor Single P - Channel Field Effect Transistor
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FDS9435A Power Mosfet Transistor Single P - Channel Field Effect Transistor General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management ......
Anterwell Technology Ltd.
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BTS282Z E3230 TO220-7 N-Channel MOSFET 49V 80A Transistors FETs
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BTS282Z E3230 TO220-7 N-Channel MOSFET 49V 80A Transistors FETs BTS282ZE3230AKSA2 power MOSFET from Infineon Technologies. Its maximum power dissipation is 300000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube......
Angel Technology Electronics Co
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IRF7342TRPBF N-Channel MOSFET, 40V Vds, 9.1A Id, Low Rds(on), SOIC-8 SMT, RoHS Compliant, Fast Switching for Power Electronics
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...Channel MOSFETProduct Introduction of Infineon IRF7342TRPBF N-Channel MOSFET 1. Product Overview Infineon IRF7103342TRPBF is a high-performance N-channel enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET) developed by Infineon Technologies AG—a global leader in semiconductor......
Berton Electronics Limited
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FDMS6681Z 30V P Channel Mosfet Transistor 21.1A 49A 8PQFN
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FDMS6681Z MOSFET P-CH 30V 21.1A/49A 8PQFN Original Mosfet Transistor Products Description: 1. FAIRCHILD SEMICONDUCTOR FDMS6681Z transistor, MOSFET, P-channel, -49A, -30V, 0.0027Ohm, -10V, -1.7V 2. The FDMS6681Z is A-30V P-channel PowerTrench® MOSFEts hav......
Shenzhen Res Electronics Limited
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