MJD41CT4G 100V 41A NPN Darlington Power Tab MOSFET Low Vce(sat) High Gain Fast Switching Built-in Clamp Diode TO-220 Package for Easy Mounting
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MJD41CT4G 100V 41A NPN Darlington Power Tab MOSFET Low Vce(sat) High Gain Fast Switching Built-in Clamp Diode TO-220 Package for Easy Mounting andnbsp; ......
TOP Electronic Industry Co., Ltd.
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BD681 NPN Darlington Power Transistors Medium Power Switching
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...NPN Darlington Power Transistors Medium Power Switching ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES ■ MONOLITHIC DARLINGTON CONFIGURATION ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington......
Anterwell Technology Ltd.
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IRF540NSTRLPBF 100V 33A HEXFE Power MOSFET Transistor
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...Power MOSFET Transistor 100V 44mΩ 33A New Orignal high quality Parameters in details: Advanced HEXFET Power MOSFETs from Packaging: the TO - 263 Type: N channel Continuous drain current (ID) at 25°C: 33A Drain-source voltage (VDSS) : 100V Gate source threshold voltage: 4V @ 250uA Leakage source on resistance: 44 MQ2@16A,10V Maximum power......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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NPN PNP POWER MOSFET STD12NE06 TO-252 ST New and Original in stock
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NPN PNP POWER MOSFET STD12NE06 TO-252 ST New and Original in stock TYPICAL RDS(on) = 0.08 W EXCEPTIONAL dv/dt CAPABILITY AVALANCHERUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATIONORIENTED CHARACTERIZATION ADD SUFFIX ”T4” FORORDERING IN TAPE & REEL ......
Mega Source Elec.Limited
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MMBTA56 NPN Darlington Power Transistor , Fast Switching Transistor NPN
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SOT-23 Plastic-Encapsulate Transistors MMBTA56 TRANSISTOR (NPN) FEATURE l General Purpose Amplifier Applications Marking :2GM MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Collector-......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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New / Original NPN BIPOLAR Power Mosfet Transistor 120 Volts 0.5 Amps 2N1893
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New / Original NPN BIPOLAR Power Mosfet Transistor 120 Volts 0.5 Amps 2N1893 Maximum Ratings RATING SYMBOL MAX. UNIT Collector-Emitter Voltage VCEO ......
ChongMing Group (HK) Int'l Co., Ltd
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Darlington Bipolar Mosfet Power Transistor TIP147 10A Current 100V Voltage
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MOSFET Transistors TO-3P TIP147 10A 100V PNP Darlington Bipolar Power Transistor TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington......
Shenzhen ATFU Electronics Technology ltd
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TIP142 transistors TIP142T Bipolar (BJT) Transistor NPN - Darlington 100V 10A 80W Through Hole TO220 Original and New
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... Current - Collector Cutoff (Max) 2mA DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A, 4V Power - Max 80W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3...
Shenzhen Quanyuantong Electronics Co., Ltd.
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FDI045N10A N Channel Power MOSFET 100V164A 4.5mΩ High Power
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High Power MOSFET FDI045N10A N-Channel PowerTrench® MOSFET 100V, 164A, 4.5mΩ High Power MOSFET FDI045N10A N-Channel PowerTrench® MOSFET 100V, 164A, 4.5mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors ......
Sunbeam Electronics (Hong Kong) Limited
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IRF3205PBF Silicon Npn Power Transistors 55V 110A 8.0mΩ Power MOSFET
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...Npn Power Transistors 55V 110A 8.0mΩ Power MOSFET Npn Power Transistor Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs......
Shenzhen Retechip Electronics Co., Ltd
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