Silicon Carbide IMW120R090M1H N-Channel 1200V MOSFETs Transistors TO-247-3
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Silicon Carbide IMW120R090M1H N-Channel 1200V MOSFETs Transistors TO-247-3 Product Description Of IMW120R090M1H IMW120R090M1H is CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET, Very low switching losses. Specification Of IMW120R090M1H Part Number......
ShenZhen Mingjiada Electronics Co.,Ltd.
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1200v 50a High Power Mosfet Transistors / Thyristor CLA50E1200HB
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...MOSFET TRANSISTORS / THYRISTOR FOR LINE FREQUENCY 1200V 50A Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Circuit Control Mounting Type: Through Hole Package: TO247 High Light: n channel mosfet transistor , n channel transistor CLA50E1200HB High Efficiency Thyristor for for line frequency 1200V......
Shenzhen Huahao Gaosheng Technology Co., Ltd
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CLA50E1200HB High Power Mosfet Transistors / Thyristor For Line Frequency 1200V 50A
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CLA50E1200HB High Efficiency Thyristor for for line frequency 1200V 50A Features / Advantages: ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability Applications: ● Softstart AC motor control ● DC Motor control ● Power converter ● ......
Shenzhen Koben Electronics Co., Ltd.
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H30R1353 H30R1602 H20R1353 N Mosfet Transistor 254W H15R1203 H25R1202 H20R1203
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... (Max) 1200V Current - Collector (Ic) (Max) 30A Current - Collector Pulsed (Icm) 45A Vce(on) (Max) @ Vge, Ic 1.7V @ ......
Shenzhen Quanyuantong Electronics Co., Ltd.
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FGA25N120ANTD Power Mosfet Transistor New & Original 1200V NPT Trench IGBT
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FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = ......
Anterwell Technology Ltd.
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Original High Voltage Mosfet Transistor , Mosfet Driver Using Transistor
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..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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FGA25N120ANTDTU Power Mosfet Transistor New & Original 1200V NPT Trench IGBT
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FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = ......
ChongMing Group (HK) Int'l Co., Ltd
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D1028UK RF MOSFET Transistors RF MOSFET N-CH 70V 30A 5-Pin Case DR P Channel Mosfet
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D1028UK RF MOSFET Transistors RF MOSFET N-CH 70V 30A 5-Pin Case DR anufacturer: TT Electronics Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 30 A Vds - Drain-Source Breakdown Voltage: ......
Wisdtech Technology Co.,Limited
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FDMS6681Z 30V P Channel Mosfet Transistor 21.1A 49A 8PQFN
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FDMS6681Z MOSFET P-CH 30V 21.1A/49A 8PQFN Original Mosfet Transistor Products Description: 1. FAIRCHILD SEMICONDUCTOR FDMS6681Z transistor, MOSFET, P-channel, -49A, -30V, 0.0027Ohm, -10V, -1.7V 2. The FDMS6681Z is A-30V P-channel PowerTrench® MOSFEts hav......
Shenzhen Res Electronics Limited
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IR2110STRPBF 600V/1200V MOSFET Driver 2A Peak Fast 100ns Switching UVLO CMOS/LSTTL Inputs SOIC-16 Ideal for Motor Drives and Inverters
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IR2110STRPBF 600V/1200V MOSFET Driver 2A Peak Fast 100ns Switching UVLO CMOS/LSTTL Inputs SOIC-16 Ideal for Motor Drives ......
TOP Electronic Industry Co., Ltd.
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