600V-1200V Power IGBT High Ruggedness Performance For PFC Applications
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...1200V Power IGBT High Ruggedness Performance For PFC Applications Product Description: The High Power IGBT is a type of device that is used in many different applications, and it is particularly useful in the Hair removal device industry. It is a device that operates at a voltage rating of 650V-1200V, making it perfect for use in high-power applications. The device is an IGBT......
Guangdong Lingxun Microelectronics Co., Ltd
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Hot selling FF100R12RT4 FF100R12 100A 1200V Power IGBT Module
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ShenZhen QingFengYuan Technology Co.,Ltd.
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IGBT Modules NXH80T120L2Q0S2TG Power Module 1200V Automotive IGBT Modules
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... level inverter stage. Specification Of NXH80T120L2Q0S2TG Part Number: NXH80T120L2Q0S2TG Collector−Emitter Voltage: 1200V Gate−Emitter Voltage: ±20V Continuous Collector Current @ Th = 80°C (TJ = 175°C): 67A Pulsed Collector Current (......
ShenZhen Mingjiada Electronics Co.,Ltd.
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IRG4PC50UPBF 1200V 50A IGBT Power Module Robust Performance
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...1200V 50A IGBT Power Module High Efficiency Reliable and Robust Performance Product Listing: IRG4PC50UPBF IGBT Power Module The IRG4PC50UPBF IGBT power module is an ideal choice for various applications, including motor control, welding, and industrial automation. This power module is capable of delivering up to 500A of continuous current and 10kV of voltage, making it an excellent choice for high-power......
Shenzhen Sai Collie Technology Co., Ltd.
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Infineon IGBT Power Module FF50R12RT4 34mm 1200V Dual IGBT With Fast Trench / Fieldstop
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...1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled Typical Applications • High Power Converters • Motor Drives • UPS Systems Electrical Features • Extended Operation Temperature Tvj op • Low Switching Losses • Low VCEsat • Tvj op = 150°C • VCEsat with positive Temperature Coefficient Mechanical Features • Isolated Base Plate • Standard Housing IGBT......
Hontai Machinery and equipment (HK) Co. ltd
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single high-power IGBT driver core 1DI 825,Suitable for all IGBTs up to 1200V/1700V
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POWER-SEM Single IGBT Driver 1DI 825 single high-power IGBT driver core Features ● ASIC single IGBT Driver Core ● Suitable for all IGBTs up to 1200V/1700V ● Short circuit and over current protection by VCEsat monitoring ● Independent monitoring of each IGBT......
BEIJING POWER-SEM ELECTRONIC TECHNIQUE CO. LTD.
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FS50R12W2T4IGBT Igbt Power Module 1200V 50A IGBT - Inverter Configuration
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FS50R12W2T4IGBT Igbt Power Module 1200V 50A IGBT - Inverter Configuration TypischeAnwendungen TypicalApplications • Klimaanlagen • AirConditioning • Motorantriebe • MotorDrives • Servoumrichter • ServoDrives • USV-Systeme • UPSSystems ......
Shenzhen Hongxinwei Technology Co., Ltd
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Toshiba High Power IGBT Module High Speed MG200Q1US51 Transistor Module
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...IGBT Power Module MG200Q1US51 Transistor Module MG200Q1US51 Product Description Manufactured by: Toshiba America, Inc. Part number: MG200Q1US51 Part Category: Transistors Description: 300A, 1200V, N-CHANNEL IGBT Collector-Emitter Voltage: 1200V Gate-Emitter Voltage: 20V Collector Current (DC): 300A Forward Current: (DC): 200A Collector Power......
Guangzhou Sande Electric Co.,Ltd.
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FF300R12KE4 High Power Igbt Module
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... Power Igbt Module N-CH 1200V 460A IGBT Inverter IGBT Modules Applications Motor control and drives Uninterruptible Power Supplies (UPS) Specifications Product Attribute Attribute Value Manufacturer: Infineon Product Category: IGBT Modules Product: IGBT ......
Shenzhen Retechip Electronics Co., Ltd
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1200V 900A IGBT Modules Single Si FZ900R12KE4HOSA1 SP000524466
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...IGBT module 1200V 900A FZ900R12KE4 Manufacturer: Infineon Product Type: IGBT Modules Configuration: Single Collector-emitter maximum voltage VCEO: 1.2 kV Collector-emitter saturation voltage: 1.75 V Continuous collector current at 25 C: 900 A Gate-emitter leakage current: 400 nA Pd-power......
Eastern Stor International Ltd.
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