1200V 1500V SiC Power Semiconductor , Multi Function Silicon Semi Conductor
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Great Heat Dissipation SiC Power Semiconductor designed with Low Leakage *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-......
Reasunos Semiconductor Technology Co., Ltd.
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Automotive IGBT Modules A2U12M12W2-F2 3 Level Topology 1200V SiC Power MOSFET Power Module
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... topology that integrates the advanced silicon carbide Power MOSFET technology. This A2U12M12W2-F2 module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on...
ShenZhen Mingjiada Electronics Co.,Ltd.
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4H-N 4inch 6inch Sic Wafers Semiconductor Material For SBD MOS Device
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...sic wafers dummy Prime Production grade for SBD MOS Device 1. Comparison of third-generation semiconductor materials SiC crystal is a third-generation semiconductor material, which has great advantages in low-power, miniaturization, high-voltage and high-frequency application scenarios. The third-generation semiconductor......
SHANGHAI FAMOUS TRADE CO.,LTD
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Polishing Silicon Carbide Ingot Substrate SiC Chip Semiconductor 8inch 200mm
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SiC Substrate/Wafers (150mm, 200mm) Silicon Carbide Ceramic Excellent CorrosionSingle crystal single side polished silicon wafer sic wafer polishing wafer manufacturer Silicon Carbide SiC Wafer4H-N SIC ingots/200mm SiC Wafers 200mm SiC Wafers About Silicon Carbide (SiC)Crystal Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor......
SHANGHAI FAMOUS TRADE CO.,LTD
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650V-1200V High Power IGBT Empowering Your System with Unmatched Performance
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...Power IGBT is a cutting-edge semiconductor device that offers exceptional performance and reliability for a wide range of applications. With its faster switching speed and high input impedance, this IGBT is designed to meet the demands of modern power electronics systems. Featuring a voltage rating of 650V-1200V, the High Power......
Guangdong Lingxun Microelectronics Co., Ltd
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Mitsubishi Igbt Modules CM200DY-12H 200A 1200V High Power Switching Use Insulated Type
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Mitsubishi Igbt Modules CM200DY-12H 200A 1200V High Power Switching Use Insulated Type Description: Mitsubishi IGBT Modules are designed for use in switching applications.Each module consists of two IGBTs in a ......
Shenzhen Retechip Electronics Co., Ltd
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TPS54325PWP PS54325 TPS54325PWPR TSSOP Power Semiconductor Devices
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TPS54325PWP PS54325 TPS54325PWPR TSSOP Power Semiconductor Devices MORE STOCK POWER HK32F030MJ4M6 HK32F030ME6U7A HK32F0301MF6N7A HK32C030K8U7 HK32F030MD4P6 HK32F030MG6U7A HK32F0301MF6U7A HK32C030K8T7 HK32F030MF4P6 HK32F0301MJ4M6 HK32F0301ME6U7A ......
HONG KONG KEEP BOOMING TECHNOLOGY CO.,LIMITED
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NNC Power Semiconductor Module MDC/MDK
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NNC Power Semiconductor Module...
CLION ELECTRIC CO.,LTD
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NTH4L020N090SC1 SIC Power MOSFET 900V TO247-4L 20MOHM
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Shenzhen Zhongkaixin Micro Electronics Co., Ltd.
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Superior Al Wire Bonding For Precision Bonding In Microelectronics Power Semiconductor Industry
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...Power Semiconductor Industry In the fast - evolving microelectronics power semiconductor industry, our Superior Al Wire Bonding solution stands out. Made from high - quality aluminum, our wire exhibits outstanding performance. Aluminum's excellent electrical conductivity ensures efficient power transfer, which is vital for power semiconductor......
SICHUAN WINNER SPECIAL ELECTRONIC MATERIALS CO., LTD.
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