QPA2933 Integrated Circuits ICs , Rf Power Amplifier Ic 3.3GHz 60W GaN PA OVM
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... of saturated output power and 28dB of large-signal gain while achieving 62% power-added efficiency. The QPA2933 is fabricated on a 0.25µm QGaN25 GaN (Gallium Nitride) on SiC (Silicon Carbide) process and can support a variety of ......
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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IGBT Power Module MGF0906B - TOSHIBA - < High-power GaAs FET (small signal gain stage)>
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... High output power P1dB=37.0dBm(TYP.) @f=2.3GHz High power gain GLP=11.0dB(TYP.) @f=2.3GHz High power added efficiency P.A.E =40%(TYP.) @f=2.3GHz,P1dB Hermetically sealed metal-ceramic package with ceramic lid Specifications: part no...
Mega Source Elec.Limited
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