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2 3ghz S Band Power Amplifier

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2 3ghz s band power amplifier

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QPA2933 Integrated Circuits ICs , Rf Power Amplifier Ic 3.3GHz 60W GaN PA OVM

China QPA2933 Integrated Circuits ICs , Rf Power Amplifier Ic 3.3GHz 60W GaN PA OVM on sale
... of saturated output power and 28dB of large-signal gain while achieving 62% power-added efficiency. The QPA2933 is fabricated on a 0.25µm QGaN25 GaN (Gallium Nitride) on SiC (Silicon Carbide) process and can support a variety of ......
HongKong Wei Ya Hua Electronic Technology Co.,Limited

Address: Room 3001-2, Tower A, World Trade Plaza, No. 9 Fuhong Road, Futian District, Shenzhen

IGBT Power Module MGF0906B - TOSHIBA - < High-power GaAs FET (small signal gain stage)>

China IGBT Power Module MGF0906B - TOSHIBA - < High-power GaAs FET (small signal gain stage)> on sale
...  High output power P1dB=37.0dBm(TYP.) @f=2.3GHz  High power gain GLP=11.0dB(TYP.) @f=2.3GHz  High power added efficiency P.A.E =40%(TYP.) @f=2.3GHz,P1dB  Hermetically sealed metal-ceramic package with ceramic lid Specifications: part no...
Mega Source Elec.Limited

Address: R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031

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