FFSP2065B-F085 Automobile Chips TO-220-2 Through Hole SiC Schottky Diodes
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...Diodes TO-220-2 Schottky Diode Product Description Of FFSP2065B-F085 FFSP2065B-F085 Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. Specification Of FFSP2065B-F085 Part Number FFSP2065B-F085 Technology SiC (Silicon Carbide) Schottky......
ShenZhen Mingjiada Electronics Co.,Ltd.
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Integrated Circuit Chip IDH08SG60C---3rd Generation thinQ!TM SiC Schottky Diode
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...TM SiC Schottky Diode Specifications: Datasheets IDH08SG60C Product Photos TO-220-2 Standard Package 500 Category Discrete Semiconductor Products Family Diodes, Rectifiers - Single Series thinQ!™ Packaging Tube Diode Type Silicon Carbide Schottky Voltage......
Mega Source Elec.Limited
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HSMG-A100-K72J2 72V 100A SiC Schottky Diode 2-PLCC 175°C Max Low Qrr -55°C to +175°C AEC-Q101
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HSMG-A100-K72J2 andnbsp; Features andnbsp; Industry-standard PLCC-2 package andnbsp; High-reliability LED package andnbsp; High brightness using AlInGaP and InGaN dice technologies andnbsp; Available in full selection of colors andnbsp; Super wide viewing ......
TOP Electronic Industry Co., Ltd.
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Power Supply Diode Schottky Barrier Stable , MBR2045CT SiC Schottky Rectifier
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Schottky Barrier Diode Device for Switching Power Supply with Low VF *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas, ......
Reasunos Semiconductor Technology Co., Ltd.
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3 Inch Silicon Carbide Wafer , Sic Substrate Excellent Transient Characteristics
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...sic wafer,4H High Purity Silicon Carbide Substrates,high purity 4inch SiC substrates ,4inch Silicon Carbide substrates for semiconductor, 4inch SiC substrates ,Silicon Carbide substrates for semconductor ,sic single crystal wafers ,sic ingots for gem Application areas 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN, diodes, IGBT, MOSFET 2 optoelectronic devices: mainly used in GaN/SiC......
SHANGHAI FAMOUS TRADE CO.,LTD
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SiC Substrate Wafer Manufacturer 4 inch P Grade SiC Wafer Factory
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SiC Substrate Wafer Manufacturer 4 inch P Grade SiC Wafer Factory Homray Material Technology offers silicon carbide SiC n-type and p-tpye epitaxial wafer. SiC epi wafer is mainly used for Schottky diodes, metal-oxiHomray Material Technology offersthe best price on the market for high quality SiC......
Homray Material Technology
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STPSC10H065BY-TR Smd Diode Surface Mount Diode 650 V 10A DPAK
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STPSC10H065BY-TR Diode 650 V 10A Surface Mount DPAK Datasheet:STPSC10H065BY-TR Category Single Diodes Mfr STMicroelectronics Series Automotive, AEC-Q101 Product Status Active Technology SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max) 650 V ......
Shenzhen Zhaocun Electronics Co., Ltd.
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IDH10S120
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... Manufacturer: Infineon Product Category: Schottky Diodes & Rectifiers RoHS: Details Product: Schottky Silicon Carbide Diodes Mounting Style: Through Hole Package / Case: TO-220-2 Configuration: Single Technology: SiC If - Forward Current: 10 A Vrrm......
ZhongHao Industry Limited
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