BF981 N Channel 20mA 225mW Silicon Dual Gate Mosfet
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Double gate N channel field effect Cross tube radio frequency audion package To-50 Silicon N - Channel Dual Gate Mos -Fet 20V 20mA 225mW Descriptions: Depletion type fieldeffect transistor in a plastic X-package with source and substrate interconnected, ......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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Automotive IGBT Modules DF11MR12W1M1PB11BPSA1 1200V Silicon Carbide CoolSiC MOSFET
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...Channel (Dual) MOSFET Arrays. Specification Of DF11MR12W1M1PB11BPSA1 Part Number DF11MR12W1M1PB11BPSA1 Technology Silicon Carbide (SiC) Current - Continuous Drain (Id) @ 25°C 50A (Tj) Gate Charge (Qg) (Max) @ Vgs 124nC @ 15V Input Capacitance (Ciss)...
ShenZhen Mingjiada Electronics Co.,Ltd.
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High Durability Silicon Low Gate Threshold Voltage Mosfet TO-251
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...Silicon Low Gate Threshold Voltage Mosfet TO-251 Product Description: Our MOSFET is made of high-quality silicon material, ensuring its durability and reliability. It also has a lead-free status, meeting the RoHS standards for environmental protection. The MOSFET......
Guangdong Lingxun Microelectronics Co., Ltd
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ......
Anterwell Technology Ltd.
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ......
ChongMing Group (HK) Int'l Co., Ltd
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1200V 300A IGBT Module FF300R12KT4 Silicon Dual Configuration ROHS Approval
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IGBT Module FF300R12KT4 Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V VCE sat 1,75 2,05 2,10 2,15 V V V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung......
Shenzhen Hongxinwei Technology Co., Ltd
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D2010uk Gold Metallised Silicon Rf Power Mosfet Dmos Metal Gate 50 To 1000 Mhz 20w
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D2010UK N/A Electronic Components IC MCU Microcontroller Integrated Circuits D2010UK #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:......
Shenzhen Kaigeng Technology Co., Ltd.
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Multiscene Silicon Carbide MOSFET Multi Function For UPS Power Supply
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Silicon Carbide Low On Resistance Field Effect Transistor for UPS Power Supply Product Description: Silicon Carbide (SiC) MOSFET is a high-frequency, high-efficiency Metal Oxide Semiconductor Field Effect Transistor (MOSFET) based on Silicon Carbide material. This MOSFET has a wide working temperature range, low on-resistance, high-frequency operation, low gate......
Reasunos Semiconductor Technology Co., Ltd.
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AP50N10D Dual Mosfet Switch / 50A 100V TO-252 High Power Transistor
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... DC-DC converters Motor control Automotive applications Dual Mosfet Switch Description: The AP50N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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IRF630NSTRLPBF MOSFET Power Electronics High Efficiency Low On Resistance
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... Rectifier Corporation. It is optimized for low voltage, high speed switching applications. This MOSFET is housed in a TO-220AB package. Features: • Low RDS(on) • Low gate charge • Low input and output capacitance • Avalanche energy rated •...
Shenzhen Sai Collie Technology Co., Ltd.
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