NTZD3154NT1G 20V 570mA N Channel MOSFET SMD SMT Mounting Style
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...20V 570mA N Channel MOSFET SMD SMT Mounting Style NTZD3154NT1G ,onsemi ,MOSFET , SOT-563-6 , 2 N-Channel , NTZD3154N , 20 V , 570 mA , Product Attribute Attribute Value Manufacturer: onsemi Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-563-6 Transistor Polarity: N-Channel Number of Channels: 2 Channel......
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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Common Power Mosfet NTMFS4C020NT1G 20V 4A P Channel MOSFET Surface Mount
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NTMFS4C020NT1G MOSFET Power Electronics Product Description: The NTMFS4C020NT1G MOSFET Power Electronics is a N-Channel MOSFET designed to provide reliable performance in a wide range of power electronics applications. This device has an on-resistance of ......
Shenzhen Sai Collie Technology Co., Ltd.
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1.8V Specified Dual P Channel MOSFET FDMA291P -20V -6.6A 42mΩ
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High Power MOSFET FDMA291P P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -6.6A, 42mΩ High Power MOSFET FDMA291P P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -6.6A, 42mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is ......
Sunbeam Electronics (Hong Kong) Limited
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FS8205A Dual N Channel Enhancement Mode MOSFET 20V 6A
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...Channel Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) 2.Features RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A......
Shenzhen Hongxinwei Technology Co., Ltd
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SPD06N80C3 N-Channel MOSFET 800V 6A (Ta) 83W (Tc) Surface Mount PG-TO252-3
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... Vgs(th) (Max) @ Id 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 785pF @ 100V FET Feature -...
Shenzhen Koben Electronics Co., Ltd.
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SI2399DS Transistor SI2399DS-T1-GE3 P-Channel MOSFET Transistor 20V 6A SOT-23
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...ail Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On ......
Shenzhen Quanyuantong Electronics Co., Ltd.
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NDS331N 20V N-Channel MOSFET 1.6A Continuous 0.25Ω Rds(on) SOT-23 1.8V Logic Level -55°C to +150°C
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NDS331N 20V N-Channel MOSFET 1.6A Continuous 0.25Ω Rds(on) SOT-23 1.8V Logic Level -55°C to +150°C Features 1.3 A, 20 V RDS(on) = 0.21 @ VGS = 2.7 V ......
TOP Electronic Industry Co., Ltd.
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PMCXB900UE 20V complementary N/P-channel Trench MOSFET N P Channel Mosfet
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... Polarity: N-Channel, P-Channel Number of Channels: 2 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 600 mA, 500 mA Rds On - ......
Wisdtech Technology Co.,Limited
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8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge
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20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge
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20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS......
Beijing Silk Road Enterprise Management Services Co.,LTD
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