Stable 20V Low Power P Channel Mosfet , Practical Low Voltage High Current Transistor
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Product Description: Introducing Low Voltage MOSFET from SGT, a breakthrough FOM optimization which covers more applications. This low gate voltage mosfet offers low power loss and low threshold voltage that allows it to be used in various motor driver, 5G......
Reasunos Semiconductor Technology Co., Ltd.
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LT40P04AD TO-252 Package Low Power P Channel Mosfet For PWM Application
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LT40P04AD Low Voltage MOSFET TO-252 Package P Channel For PWM Application Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) RDS(ON) 4.5V(mΩ) Qg (nC) Ciss (pF) Min. Min. Min. Max. TYP MAX TYP MAX Typ Typ LT40P04AD TO-252......
Guangdong Lingxun Microelectronics Co., Ltd
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NTMFS4C024NT1G Integrated Circuit Chip 2.8mOhm Low Power N Channel Mosfet
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Integrated Circuit Chip NTMFS4C024NT1G N-Channel Transistors 30V 5-DFN package Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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FDMC86102L High-Performance Low-Voltage N-Channel MOSFET Power Electronics shielded Gate 100V 18A
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...Low-Voltage N-Channel MOSFET Power Electronics shielded Gate 100V 18A Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 7A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 23mOhm @ 7A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V Vgs (Max) ±20V......
Shenzhen Sai Collie Technology Co., Ltd.
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SOT-23 3 Leads 20V 5A CJ2312 N Channel Mosfet
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CJ2312 N - Channel 20V 5A ( D - S ) Mosfet SOT-23 ( TO-236 ) 3-Lead Plastic - Encapsulate Mosfets FEATURES: • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC ......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge
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20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS=4.5V ESD Rating:2000V HBM Application Battery protection Load switch Power......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge
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20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS=4.5V ESD Rating:2000V HBM Application Battery protection Load switch Power......
Beijing Silk Road Enterprise Management Services Co.,LTD
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High Power FDMA1024NZ Dual N Channel MOSFET 20V 5.0A 54mΩ
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High Power MOSFET FDMA1024NZ Dual N-Channel PowerTrench® MOSFET 20V, 5.0A, 54mΩ High Power MOSFET FDMA1024NZ Dual N-Channel PowerTrench® MOSFET 20V, 5.0A, 54mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors......
Sunbeam Electronics (Hong Kong) Limited
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IXFK27N80Q N Channel Mosfet Transistor 800V 27A 0.32 Rds Power MOSFETs HiPerFET
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...Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages z Low......
Shenzhen Retechip Electronics Co., Ltd
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BUZ10 Transistor N Channel MOSFET 50V 23A 3 Pin TO-220-3 Package
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...Channel MOSFET Trans MOSFET N-CH 50V 23A 3-Pin(3+Tab) TO-220 Category Power MOSFET Channel Mode Enhancement Channel Type N Configuration Single Material Si Maximum Continuous Drain Current 23A Maximum Drain Source Voltage 50V Maximum Gate Source Voltage ±20V Operating Temperature (°C) -65 to +175 Maximum Power......
Yougou Electronics (Shenzhen) Co., Ltd.
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