Original 3 Pin Transistor FGA25N120ANTD 1200V NPT Trench IGBT
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...1200V NPT Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C • Extremely enhanced avalanche capability Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT......
Anterwell Technology Ltd.
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FGA25N120ANTDTU Power Mosfet Transistor New & Original 1200V NPT Trench IGBT
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...1200V NPT Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C • Extremely enhanced avalanche capability Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT......
ChongMing Group (HK) Int'l Co., Ltd
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FGA25N120ANTD TO-3P NPT Trench IGBT 25A 1200V
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...NPT Trench IGBT 25A 1200V Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C • Extremely enhanced avalanche capability Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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FGA25N120ANTD Integrated Circuit Components IGBT NPT Trench 1200V 50A 312W Through Hole TO-3P
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... 4.1mJ (on), 960µJ (off) Input Type Standard Gate Charge 200nC Td (on/off) @ 25°C 50ns/190ns Test Condition 600V, 25A, 10Ohm, 15V Reverse Recovery Time (trr)...
Shenzhen Koben Electronics Co., Ltd.
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TO-247 Enhancement Mode Power IGBT 25A 1200V High Current Capacity
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25A 1200V TO-247 Enhancement Mode Power IGBT High Current Capacity N-Channel Enhancement Mode Power IGBT LGT25N120B FEATURES • Trench and field-stop technology • High speed switching • Low collector to emitter saturation voltage • Easy parallel switching capability • Short circuit withstands time 10μs • High ruggedness performance APPLICATIONS • General inverter • Motor drives IGBTs......
Guangdong Lingxun Microelectronics Co., Ltd
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FZ1600R12HP4 Automotive IGBT Modules IHM-B Module 1200V Single Switch IGBT Module
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... Trench-IGBT 4. Specification Of FZ1600R12HP4 Series IHM-B IGBT Type Trench Configuration Single Switch Voltage - Collector Emitter Breakdown (Max) 1200 V Current - Collector (Ic) (Max) 2400 A Power - ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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1200V 48A 529W IGBT Transistor Module , Trench Field Stop IGBT AFGHL40T120RLD
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AFGHL40T120RLD IGBT Trench Field Stop 1200 V 48 A 529 W Through Hole TO-247-3 Product Attribute Attribute Value Select Attribute Manufacturer: onsemi Product Category: IGBT Transistors RoHS: Details Package / Case: TO-247-3 Packaging: Tube Brand: onsemi ......
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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FGA25N120ANTD FGA25N120 Transistor 25N120 Original New IGBT Mosfet NPT and Trench 1200V 50A TO-3P China Made Bulk New In Stock
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...IGBT Type NPT and Trench Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 50A Current - Collector Pulsed (Icm) 90A Vce(on) (Max) @ Vge, Ic 2.65V @ 15V, 50A Power - Max 312W Switching Energy 4.1mJ (on), 960µJ (off) Input Type Standard Gate Charge 200nC Td (on/off) @ 25°C 50ns/190ns Test Condition 600V, 25A......
Shenzhen Quanyuantong Electronics Co., Ltd.
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High Ruggedness IGBT Power Transistor IKW25N120T2 K25T1202 1200V 25A
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... discrete with anti-parallel diode in TO-247 package Infineon 1200V Gen8 IGBTs feature trench gate field stop technology delivered in industry standard TO-247 packages to provide best-in-class performance for industrial and energy-......
Shenzhen Retechip Electronics Co., Ltd
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FGA25N120ANTDTU IGBT Power Module Transistors IGBTs Single
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...IGBT Type NPT and Trench Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 50A Current - Collector Pulsed (Icm) 90A Vce(on) (Max) @ Vge, Ic 2.65V @ 15V, 50A Power - Max 312W Switching Energy 4.1mJ (on), 960µJ (off) Input Type Standard Gate Charge 200nC Td (on/off) @ 25°C 50ns/190ns Test Condition 600V, 25A......
KZ TECHNOLOGY (HONGKONG) LIMITED
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