50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor
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...28V DC-4GHz High Electron Mobility GAN RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor is supplied in a ceramic /metal flange package. Votage 28V......
Zhongshi Zhihui Technology (suzhou) Co., Ltd.
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QPD1035 Wireless Communication Module 40W 50V 6 GHz GaN RF Power Transistor
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QPD1035 Wireless Communication Module 40W 50V 6 GHz GaN RF Power Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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HMC199MS8ETR Cellular RF Power Transistors For High Gain And Efficiency
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...RF Power Transistor For High Gain And Efficiency HMC199MS8ETR RF Power Transistors Product Description: The HMC199MS8ETR is a GaN-based RF power transistor that uses the latest Gallium Nitride (GaN) technology. It is designed for use in high power applications up to 2-500MHz, and provides outstanding performance and efficiency. It has a high power gain of 28.5dB and a maximum output power......
Shenzhen Sai Collie Technology Co., Ltd.
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Airfast RF GaN Mosfet Power Transistor 1800 - 2200 MHz Working Frequency
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Mosfet Power Transistor A3G20S250-01SR3 Airfast RF Power GaN Transistor, 1800-2200 MHz, 45 W Avg., 48 V This 45 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz. This part is ......
Shenzhen Weitaixu Capacitor Co.,Ltd
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DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors
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VBE Technology Shenzhen Co., Ltd.
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5.8GHz 100W Autel Anti Fpv System C-Uas Mavic 3 GaN RF Power Amplifier Module location anti drone anti dji anti autel anti uav
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...GaN Anti-Module With Estimated Delivery Time Key Word Place of Origin Guangdong, China Brand NameL LDSK Place of Origin Guangdong, China Product name RF power amplifier module(GaN) Frequency 5725-5850MHz 5.8G Out power 100W Frequency and Power Customization Support Max Gain 50 dBm Voltage 24-28V......
Shenzhen Ladasky Technology Co.，Ltd
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D2085UK 28V120W 1MHz-1000MHz Push-pull RF Power Transistor MOSFET
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...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power...
Wisdtech Technology Co.,Limited
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RF Power Transistors MRW53601 NPN SILICON RF POWER TRANSISTOR MOTOROLA RF Power Transistors
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MRW53601 is a NPN SILICON RF POWER TRANSISTOR. Part NO: MRW53601 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are ......
Mega Source Elec.Limited
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2.4G 4G 50W 2300-2500MHz GaN RF Power Amplifier Drone Counter Module for Anti Drone System Mavic3 Fpv Djis Autel Anti Fpv with Isolation Protector
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... Voltage 5, Adjustable GAN Voltage 6, GAN Voltage 7, Isolation Protector 1.RF Data Item Spec. Remarks Frequency Range(MHz) 2300-2500 Bandwidth Range±10MHz Working Voltage 28V 24-30V Analog sweeping speed 250KHz Output Power (Max) ≥47dBm 50W Gain......
JinYaTong Technology(china) Co., Ltd
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RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers
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... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND ...
Shenzhen Koben Electronics Co., Ltd.
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