Low Voltage Mosfet Portable Devices Use SOT-23 P Channel BC2301
|
... Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current ID -2.3 A Pulsed Drain Current IDM -10 A Continuous Source-Drain Diode Current IS...
Guangdong Huixin Electronics Technology Co., Ltd.
|
NTR4503NT1G MOSFET Power Electronics Single N-Channel Low Gate Charge SOT-23 30 V 2.5 A
|
...MOSFET Power Electronics Single N-Channel Low Gate Charge SOT-23 30 V 2.5 A –20 V, –0.83 A, 0.5 Ω –20 V, –0.83 A, 0.5 ΩSingle P-Channel (–1.5 V) Specified PowerTrench® MOSFET –20 V, –0.83 A, 0.5 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage......
Shenzhen Sai Collie Technology Co., Ltd.
|
Ultra Low On-Resistance HEXFET Power MOSFET P-Channel MOSFET SOT-23 Footprint Fast Switching IRLML6402TRPBF
|
...MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs......
Anterwell Technology Ltd.
|
Ultra Low On-Resistance HEXFET Power MOSFET P-Channel MOSFET SOT-23 Footprint Fast Switching IRLML6402TRPBF
|
...MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs......
ChongMing Group (HK) Int'l Co., Ltd
|
40mA Current Amplifier IC Chip LM321MFX NOPB Low Power Consumption SOT-23-5 Package
|
LM321MFX NOPB SOT23-5 1 Channel Low Power Consumption Operational Amplifiers Chip IC FEATURES • (VCC = 5 V, TA = 25°C. Typical values unless specified.) • Gain-Bandwidth Product 1 MHz • Low Supply Current 430 µA • Low Input Bias Current 45 nA • Wide Supply......
Shenzhen ATFU Electronics Technology ltd
|
2N7002-7-F N-Channel 60 V 115mA (Ta) 370mW (Ta) Surface Mount SOT-23-3
|
2N7002-7-F N-Channel 60 V 115mA (Ta) 370mW (Ta) Surface Mount SOT-23-3 Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Motor Control Power Management Functions Features Low On-Resistance Low Gate Threshold Voltage Low......
Shenzhen Xinyuanpeng Technology Co., Ltd.
|
2N7002 Transistor 2N7002 MOSFET Transistor N-Channel 60V 115MA SOT-23 200mW Surface Mount
|
Product Detail Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 115mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ ......
Shenzhen Quanyuantong Electronics Co., Ltd.
|
NPN And PNP Mosfet Transistor SOT-23 SOT-23-3 LN2306LT1G
|
...MOSFET NPN Transistor PNP SOT-23(SOT-23-3) LN2306LT1G Products Description: 1. Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R 2. Diodes and Rectifiers N-channel 30V 5.8A 3. High Density Cell Design For Ultra Low On-Resistance 4 Advanced trench process technology 30V N-Channel Enhancement-Mode MOSFET Technological Parameters: Drain-source resistance 0.038 Ω polarity N threshold voltage 0.7 V Drain-Source Voltage......
Shenzhen Res Electronics Limited
|
BSS138LT1G Onsemi Mosfet Trans N CH 50V 0.2A 3 Pin SOT-23 T/R
|
...MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R The ON Semiconductor MOSFET is an N channel MOSFET transistor which operates in enhancement mode. Its maximum power dissipation is 225 mW. The maximum Drain Source Voltage of the product is 50 V and Gate Source Voltage is ±20 V. This MOSFET has an operating temperature range of -55°C to 150°C. Features and Benefits: • Low Threshold Voltage (VGS(th): 0.85 V-1.5 V) Makes it Ideal for Low...
Sunbeam Electronics (Hong Kong) Limited
|
Drive IC AP2308GEN SOT-23 0.69W 3.6A Mosfet Power Transistor
|
...SOT-23 Advantage Price For Original Stock Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost- effectiveness device. The SOT-23S package is widely preferred for commercial-industrial surface mount applications and suited for low voltage......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
|
Submit your “2n7002 low voltage mosfet sot 23” inquiry in a minute :