Semiconductor FDMC86261P Ultra-Low On-Resistance Dual N-Channel MOSFET with High Current and Power Density Capabilities
|
|
...Ultra-Low On-Resistance Dual N-Channel MOSFET with High Current and Power Density Capabilities 150V FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V Current - Continuous Drain (Id) @ 25°C 2.7A (Ta), 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds......
Shenzhen Sai Collie Technology Co., Ltd.
|
SI2304DS,215 N-Channel 20V 3.7A MOSFET with Ultra-Low 45mΩ RDS(on) SOT-23 Package High Performance Enhanced Efficiency Power Management and Logic Level Gate Drive for Space-Constrained Designs
|
...7A MOSFET with Ultra-Low 45mΩ RDS(on) SOT-23 Package High Performance Enhanced Efficiency Power Management and Logic Level Gate Drive for Space-Constrained Designs Features TrenchMOS™ technology Very fast switching Subminiature surface mount package. Applications Battery management High speed switch Low......
TOP Electronic Industry Co., Ltd.
|
7A 650V 520mΩ TO-252 Super Junction Mosfet Switching Regulator
|
7A 650V 520mΩ TO-252 Super Junction Mosfet Switching Regulator N-channel Super Junction MOSFET Part No.:LCS65R600D Package:TO-252 MAIN CHARACTERISTICS ID:7A VDSS:650V RDSON-typ VGS=10V: 520mΩ FEATURES • High Dense Super Junction Design • Excellent Gate Charge x RDS(ON) Product(FOM) • Ultra Low......
Guangdong Lingxun Microelectronics Co., Ltd
|
AP4511GD low power mosfet Power Mosfet Transistor N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
...MOSFET ▼ Low Gate Charge ▼ Fast Switching Speed ▼ PDIP-8 Package N-CH BVDSS 35V RDS(ON) 25mΩ ID 7A P-CH BVDSS -35V RDS(ON) 40mΩ ID -6.1A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low......
Anterwell Technology Ltd.
|
AP4511GD low power mosfet Power Mosfet Transistor N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
...MOSFET ▼ Low Gate Charge ▼ Fast Switching Speed ▼ PDIP-8 Package N-CH BVDSS 35V RDS(ON) 25mΩ ID 7A P-CH BVDSS -35V RDS(ON) 40mΩ ID -6.1A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low......
ChongMing Group (HK) Int'l Co., Ltd
|
NCV5703ADR2G onsemi
|
...MOSFET Drain-Source Breakdown Voltage: 20V Continuous Drain Current: 5.7A On-Resistance: 20mΩ (typ) Fast Switching Speed TO-220AB Full Pack Package The NCV5703ADR2G is an N-channel power MOSFET from ON Semiconductor. Key Features: Designed for efficient switching up to 5.7A Ultra-low RDS......
ZhongHao Industry Limited
|
