4 Inch CZ Prime Silicon Wafer With Insulating Thermal Oxidation Film Thickness 300nm 4"
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4 Inch CZ Prime Silicon Wafer With Insulating Thermal Oxidation Film Thickness 300nm 4" PAM-XIAMEN offer silicon dioxide wafer (Thermal Oxide (SiO2) on Silicon Wafers) size from 2” to 6” taken place from 850°C up to ......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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3inch / 4inch / 6inch / 8inch Lithium Niobate Thin Film LNOI Wafers With Optical Loss <0.05 DB/cm
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Abstract of LNOI Wafers 3inch/4inch/6inch/8inch Lithium Niobate Thin Film LNOI Wafers with Optical Loss <0.05 dB/cm LNOI (Lithium Niobate on Insulator) wafers represent a high-performance integrated photonics substrate fabricated through advanced wafer ......
SHANGHAI FAMOUS TRADE CO.,LTD
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4 Inch LNOI Wafer Achieving Compact Photonic Integration
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.... LNOI substrates are fabricated by transferring a thin layer of lithium niobate (LiNbO3) crystal onto an insulating substrate, typically silicon dioxide (SiO2) or silicon nitride (Si3N4). This technology offers unique advantages for the development of...
Hangzhou Freqcontrol Electronic Technology Ltd.
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