6Inch Sic Silicon Carbide Substrate 4H-P Diameter 150mm Thickness 350μm Zero MPD Production, Standard Production Grade
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...Sic Silicon Carbide Substrate 4H-P Diameter 150mm Thickness 350μm Zero MPD Production, Standard Production Grade 4H-P silicon carbide (SiC) is an important semiconductor material commonly used in high-temperature, high-frequency, and high-power electronic devices. 4H-SiC......
SHANGHAI FAMOUS TRADE CO.,LTD
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Square SiC Windows Silicon Carbide Substrate 1x1x0.5mmt SiC Lens
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Silicon carbide wafer optical 1/2/3 inch SIC wafer for sale Sic Plate Silicon Wafer Flat Orientation Enterprises for Sale 4inch 6inch seed sic wafer 1.0mm Thickness 4h-N SIC Silicon Carbide Wafer For seed growth 6H-N/6H-Semi 4H HPSI 5*10mmt 10x10mmt 5*5mm polished Silicon Carbide sic substrate chips Wafer About Silicon Carbide (SiC)Crystal Silicon carbide (SiC), or carborundum, is a semiconductor containing silicon......
SHANGHAI FAMOUS TRADE CO.,LTD
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U Type Sic Silicon Carbide Heating Element Heater for Laboratory Furnace
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... 200-350 600-1300 0.7-4.4 18 200-800 200-400 600-1600 0.7-5.8 20 200-800 250-600 700-......
Shaanxi KeGu New Material Technology Co., Ltd
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U Type Sic Silicon Carbide Heating Element Heater for Laboratory Furnace
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Product Description Outer Diameter (mm) Hot zone ( mm) Cold zone (mm) Overall length(mm) Range of resistance 8 100-300 60-200 240-700 2.1-8.6 12 100-400 100-350 300-1100 0.8-5.8 14 100-500 150-350 400-1200 0.7-5.6 16 200-600 200-350 600-1300 0.7-4.4 18 200......
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer
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... silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices,...
Shenzhen A.N.G Technology Co., Ltd
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4H-N SiC wafer manufacturer 4H-SI SIicon Carbide substrate semiconductor wafer supplier
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...SiC wafer manufacturer 4H-SI SIicon Carbide substrate semiconductor wafer supplier Homray Material Technologyprovide high quality silicon carbide SiC wafer to electronic and opto electronicindustry. Silicon carbide SiC waferis a next generation semiconductor material, with unique electricalpropertiesand excellent thermal properties , compared to silicon wafer and galliumarsenide wafer ,silicon carbide......
Homray Material Technology
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1500C CVD SIC Epitaxy Growth Furnace for Silicon Carbide Growth in 1000*1000*1500mm Effective Space
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... of the semiconductor epitaxial susceptor and etching ring. Epitaxial base, a high-purity graphite disk, with a circular groove on it to fix the wafer substrate.After placing them in the furnace, a layer of crystal film will grow on the surface of the...
Zhuzhou Ruideer Metallurgy Equipment Manufacturing Co.,Ltd
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SIC 80*200*350 Flexible Honing Brush In Silicon Carbide Abrasive Brush
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... available Material : Sic, OA Grit 60#,80#,180#,240#,320#,600#,800#,1000# MOQ 10 Customized Available Shipment ......
ZHENGZHOU JINCHUAN ABRASIVES CO., LTD.
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1700V 100A Silicon Carbide Schottky Diode MSCDC100A170D1PAG Automotive IGBT Modules
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... recovery and zero forward recovery, Aluminum nitride (AlN) substrate for improved thermal performance. Specification Of MSCDC100A170D1PAG Part Number: MSCDC100A170D1PAG Speed: No Recovery Time > 500mA (Io Voltage - Forward (Vf) (......
ShenZhen Mingjiada Electronics Co.,Ltd.
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4H Semi - Insulating Silicon Substrate , Research Grade ,10mm x 10mm
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...Silicon Substrate, Research Grade,10mm x 10mm PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide) wafer for electronic and optoelectronic industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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