DFB Wafer N-InP Substrate Epiwafer Active Layer InGaAlAs/InGaAsP 2 4 6 Inch For Gas Sensor
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DFB wafer N-InP substrate epiwafer active layer InGaAlAs/InGaAsP 2 4 6 inch for gas sensor DFB wafer N-InP substrate epiwafer's brief A Distributed Feedback (DFB) wafer on an n-type Indium Phosphide (N-InP) substrate is a critical material used in the ......
SHANGHAI FAMOUS TRADE CO.,LTD
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InP DFB Epiwafer Wavelength 1390nm InP Substrate 2 4 6 Inch For 2.5~25G DFB Laser Diode
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InP DFB Epiwafer wavelength 1390nm InP substrate 2 4 6 inch for 2.5~25G DFB laser diode InP DFB Epiwafer InP substrate's brief InP DFB Epiwafers designed for 1390nm wavelength applications are critical components used in high-speed optical communication systems, particularly for 2.5 Gbps to 25 Gbps DFB (Distributed Feedback) laser diodes. These wafers are grown on Indium Phosphide (InP) substrates......
SHANGHAI FAMOUS TRADE CO.,LTD
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P Type , InP Substrate With Low Etch Pit Density(EPD) , 3”, Prime Grade
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...InP Substrate With Low Etch Pit Density(EPD) , 3”, Prime Grade PAM-XIAMEN provides single crystal InP(Indium phosphide) wafer for micro-electronic ( HBT/ HEMT ) and opto-electronic industry ( LED / DWDM / PIN / VCSELs ) in diameter up to 6 inch. Indium phosphide ( InP ) crystal is formed by two elements , Indium and Phosphide , growth by Liquid Encapsulated Czochralski ( LEC ) method or VGF method . InP......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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Dia 3 Inch 4 Inch Technical Ceramic Parts InP Based Epi Wafer
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InP Based Epi Wafer We provides MBE / MOCVD epitaxial growth of custom structure on InP substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 2" to Ø 4” . With our extensive MOCVD experience , we can grow binary ......
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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