50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor
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...4GHz High Electron Mobility GAN RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor......
Zhongshi Zhihui Technology (suzhou) Co., Ltd.
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DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors
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VBE Technology Shenzhen Co., Ltd.
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QPD1035 Wireless Communication Module 40W 50V 6 GHz GaN RF Power Transistor
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QPD1035 Wireless Communication Module 40W 50V 6 GHz GaN RF Power Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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HMC199MS8ETR Cellular RF Power Transistors For High Gain And Efficiency
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...RF Power Transistor For High Gain And Efficiency HMC199MS8ETR RF Power Transistors Product Description: The HMC199MS8ETR is a GaN-based RF power transistor that uses the latest Gallium Nitride (GaN) technology. It is designed for use in high power applications up to 2-500MHz, and provides outstanding performance and efficiency. It has a high power gain of 28.5dB and a maximum output power......
Shenzhen Sai Collie Technology Co., Ltd.
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Airfast RF GaN Mosfet Power Transistor 1800 - 2200 MHz Working Frequency
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Mosfet Power Transistor A3G20S250-01SR3 Airfast RF Power GaN Transistor, 1800-2200 MHz, 45 W Avg., 48 V This 45 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz. This part is ......
Shenzhen Weitaixu Capacitor Co.,Ltd
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RF Power Transistors MRW53601 NPN SILICON RF POWER TRANSISTOR MOTOROLA RF Power Transistors
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MRW53601 is a NPN SILICON RF POWER TRANSISTOR. Part NO: MRW53601 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are ......
Mega Source Elec.Limited
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5.8GHz 100W Autel Anti Fpv System C-Uas Mavic 3 GaN RF Power Amplifier Module location anti drone anti dji anti autel anti uav
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... GaN Anti-Module With Estimated Delivery Time Key Word Place of Origin Guangdong, China Brand NameL LDSK Place of Origin Guangdong, China Product name RF power amplifier module(GaN) Frequency 5725-5850MHz 5.8G Out power 100W Frequency and Power ......
Shenzhen Ladasky Technology Co.，Ltd
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RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers
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... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND ...
Shenzhen Koben Electronics Co., Ltd.
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D2085UK 28V120W 1MHz-1000MHz Push-pull RF Power Transistor MOSFET
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...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power...
Wisdtech Technology Co.,Limited
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2.4G 4G 50W 2300-2500MHz GaN RF Power Amplifier Drone Counter Module for Anti Drone System Mavic3 Fpv Djis Autel Anti Fpv with Isolation Protector
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... Voltage 5, Adjustable GAN Voltage 6, GAN Voltage 7, Isolation Protector 1.RF Data Item Spec. Remarks Frequency Range(MHz) 2300-2500 Bandwidth Range±10MHz Working Voltage 28V 24-30V Analog sweeping speed 250KHz Output Power (Max) ≥47dBm 50W Gain......
JinYaTong Technology(china) Co., Ltd
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