4inch 4H/6H-P Type Silicon Carbide Wafer 350um Thickness SiC Substrate
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4inch 4H/6H P Type Silicon Carbide Wafer 350um Thickness SiC Substrate What is P-type SiC wafer? A P-type silicon carbide (SiC) wafer is a semiconductor substrate that is doped with impurities to create a P-type (positive) conductivity. Silicon carbide is ......
SHANGHAI FAMOUS TRADE CO.,LTD
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SiC crystal 4H-SEMI 4" Optical Silicon Carbide Wafer
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...4H-Semi silicon carbide sic wafers for optical lens or device Silicon Carbide SiC crystal substrate wafer carborundum SILICON CARBIDE MATERIAL PROPERTIES Product Name: Silicon carbide (SiC) crystal substrate Product Description: 2-6inch Technical parameters: Cell structure Hexagonal Lattice constant a = 3.08 Å c = 15.08 Å Priorities ABCACB (6H......
SHANGHAI FAMOUS TRADE CO.,LTD
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On-Axis 6H N Type SiC(Silicon Carbide) Wafer, Production Grade,Epi Ready,2”Size
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...6H N Type SiC(Silicon Carbide) Wafer, Production Grade,Epi Ready,2”Size PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide)waferfor electronic and optoelectronic industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type...
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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