110A 55V Silicon Low Threshold Voltage Mosfet TO-263 Package
|
|
...Low Voltage MOSFET With TO-263 Package Low Power Loss Low Rds(ON) Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) RDS(ON) 4.5V(mΩ) Qg (nC) Ciss (pF) Min. Min. Min. Max. TYP MAX TYP MAX Typ Typ LX3205A3 TO-263AB 1 N 110 55 ±20 2 4 7.5 9 10 15 - - Product Description: This MOSFET......
Guangdong Lingxun Microelectronics Co., Ltd
|
Durable Trench Low Voltage Power MOSFET , SGT Ultra Low Threshold Voltage MOSFET
|
Low Voltage Power MOSFET with Trench/SGT Structure Process and Smaller RSP *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } ......
Reasunos Semiconductor Technology Co., Ltd.
|
IXTQ130N10T MOSFET High Power Low On Resistance and Low Gate Threshold Voltage for Optimal Performance
|
...: TO-247 Product Description: The IXYS IXTQ130N10T is an N-channel MOSFET with a max drain source voltage of 100V and a max drain current of 130A. This device offers a low RDS(on) of 0.01 Ohm and is housed in a TO-247 package. It is designed for use in...
Shenzhen Sai Collie Technology Co., Ltd.
|
IRFR024NTRPBF 55V 24A N-Channel MOSFET with Ultra-Low 0.028Ω RDS(on), Fast Switching Speed 100% Avalanche Tested Compact DPAK Package Lead-Free & RoHS Compliant
|
IRFR024NTRPBF 55V 24A N-Channel MOSFET with Ultra-Low 0.028Ω RDS(on), Fast Switching Speed 100% Avalanche Tested Compact DPAK Package Lead-Free & RoHS Compliant ......
TOP Electronic Industry Co., Ltd.
|
IRF3205PBF Si 55V 110A N Channel MOSFET Transistor
|
.... Fast Switching. Fully Avalanche Rated. Lead-Free. Absolute Maximum Ratings : Description : Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This...
Shenzhen Weitaixu Capacitor Co.,Ltd
|
ADA4522-2ARZ ADA4522-2ARZ-RL Audio Power Amplifier IC Precision Amplifiers 55V Low Noise Zero Drift OpAmp 2x
|
...55V Low Noise Zero Drift OpAmp 2x FEATURES Low offset voltage: 5 μV maximum Extremely low offset voltage drift: 22 nV/°C maximum Low voltage noise density: 5.8 nV/√Hz typical 117 nV p-p typical from 0.1 Hz to 10 Hz Low input bias current: 50 pA typical Unity-gain crossover: 3 MHz typical Single-supply operation: input voltage......
ChongMing Group (HK) Int'l Co., Ltd
|
N Channel High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F
|
N Channel High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F Applications Adapter & Charger SMPS Standby Power AC-DC Switching Power Supply LED driving power Features Low On Resistance Low Gate Charge Peak Current vs Pulse Width Curve RoHS ......
Guangdong Huixin Electronics Technology Co., Ltd.
|
ADA4522-2ARZ-R7 Precision Amplifiers 55V Low Noise Zero Drift OpAmp 2x
|
...55V Low Noise Zero Drift OpAmp 2x Product Attribute Attribute Value Select Attribute Manufacturer: Analog Devices Inc. Product Category: Precision Amplifiers RoHS: Details Series: ADA4522-2 Number of Channels: 2 Channel GBP - Gain Bandwidth Product: 2.7 MHz SR - Slew Rate: 1.8 V/us CMRR - Common Mode Rejection Ratio: 130 dB Output Current per Channel: 14 mA Ib - Input Bias Current: 50 pA Vos - Input Offset Voltage......
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
|
500V 5A N-Channel MOSFET advanced high voltage MOSFET process AOD5N50
|
...popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. ......
Anterwell Technology Ltd.
|
PM080P150CG Powercube Semi middle voltage mosfet
|
...voltage mosfet For health care,wireless charger Applications: health care, wireless charger PSF70060B is PowerCubeSemi’s second generation of high voltage Super Junction MOSFET with FRD that is utilizing charge balance technology for outstanding low on-resistance and ......
Angel Technology Electronics Co
|
