High-Performance STGW35HF60WD 600V 35A 200W TO-247 IGBT Transistor
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High-Performance STGW35HF60WD 600V 35A 200W TO-247 IGBT Transistor Product Description: The STGW35HF60WD is based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as ......
Shenzhen Retechip Electronics Co., Ltd
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Practical 60KHz High Frequency IGBT , Multi Function Gate Bipolar Transistor
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High Power IGBT Device for Industrial Applications *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas, svg {display: block......
Reasunos Semiconductor Technology Co., Ltd.
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New original FGA25S125P TO 247 IGBT field effect tube 25A 1250V
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G-Resource Electronics Co.,Ltd
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Infineon IGBT Driver Low Loss DuoPack 600V 75A With Anti Parallel Diode In TO-247
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...IGBT Transistors IGBT Transistors LOW LOSS DuoPack 600V 75A,600 V IGBT with anti-parallel diode in TO-247 The 600 V, 75 A hard-switching TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT......
Shenzhen Hongxinwei Technology Co., Ltd
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GA35XCP12-247
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... to the data sheet, such as PDF files Docx documents, etc. We have GA35XCP12-247 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ......
Rozee Electronics Co., Ltd
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1200V IGBT Transistors IKW40N120CS7XKSA1 357W IGBT Trench Field Stop TO-247-3
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... with anti-parallel diode in TO-247 package with EC7 diode inside. Specification Of IKW40N120CS7XKSA1 Part Number: IKW40N120CS7XKSA1 Product Category: IGBT Transistors Technology: Si Package / Case: TO-247-3 Mounting Style: Through Hole Configuration:...
ShenZhen Mingjiada Electronics Co.,Ltd.
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FGHL75T65MQDTL4 Field Stop Trench IGBT 650V 80A 375W Through Hole TO-247-4L
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...packed with fully rated current diode. The FGHL75T65MQDTx IGBTs operate at 175°C maximum junction temperature, 650V collector to emitter voltage, and 75A collector current. These IGBTs feature positive temperature co-efficient for easy parallel operation,...
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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IXGH40N60C2D1 HiPer FASTTM TO-247 40A 600V DIP Mosfet IGBT 300W
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IXGH40N60C2D1 # 75A 600V 300W DIP TO-247 HiPer FASTTM IGBTs w/ Diode Mosfet IGBT C2-Class High Speed IGBTs Features Very High Frequency IGBT Square RBSOA High Current Handling Capability Applications Uninterruptible Power Supplies (UPS) Switch-Mode and ......
ChongMing Group (HK) Int'l Co., Ltd
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IRGPS47160DPBF IGBT Power Module Transistors IGBTs Single
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...IGBT Type - Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 160A Current - Collector Pulsed (Icm) - Vce(on) (Max) @ Vge, Ic - Power - Max - Switching Energy - Input Type Standard Gate Charge - Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) - Operating Temperature - Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247...
KZ TECHNOLOGY (HONGKONG) LIMITED
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APT25GT120BRG Discrete Semiconductors TO-247-3 IGBT Transistors
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Discrete Semiconductors APT25GT120BRG TO-247-3 IGBT Transistors Product Description: The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ......
Shenzhen Zhongkaixin Micro Electronics Co., Ltd.
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