650V IGBT Power Semiconductor With High Input Impedance In TO-247 Package
|
650V IGBT Power Semiconductor with High Input Impedance in TO-247 Package Product Description: The Inverter IGBT has a Collector-Emitter Voltage ranging from 650V to 1200V, making it an ideal choice for high voltage applications. It features an IGBT device type that allows for excellent current sharing in parallel operation, resulting in consistent performance. With a switching frequency of 20KHz to 60KHz, the Inverter IGBT......
Guangdong Lingxun Microelectronics Co., Ltd
|
Automotive IGBT Modules FS150R07N3E4B11 6-Pack IGBT Silicon Modules 150A 650V IGBT Module
|
Automotive IGBT Modules FS150R07N3E4B11 6-Pack IGBT Silicon Modules 150A 650V IGBT Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + ......
ShenZhen Mingjiada Electronics Co.,Ltd.
|
FF400R07KE4 IGBT Modules 400A 650V High Short Circuit Capability
|
FF400R07KE4 IGBT Modules IGBT Module 400A 650V 62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode 62mm C-Series module with trench/fieldstop IGBT4 and Emitter Controlled Diode VCES = 650V IC nom = 400A / ICRM = 800A Typische ......
Shenzhen Hongxinwei Technology Co., Ltd
|
WG50N65DHWQ IGBT Transistor Module , Field Stop Trench IGBT 650V 91A 278W
|
...IGBT Trench Field Stop 650 V 91 A 278 W Through Hole TO-247-3 WeEn Semiconductors WG50N65DHWQ IGBT WeEn Semiconductors WG50N65DHWQ IGBT is a high-speed 650V/50A IGBT with an anti-parallel diode in a TO247 package. This IGBT offers high-speed with low switching losses and features smooth switching behavior that avoids voltage overshoot and reduces system EMI. The WG50N65DHWQ IGBT......
HongKong Wei Ya Hua Electronic Technology Co.,Limited
|
KVP200H12E4-3TB IGBT Module Unleashing the Full Potential of Industrial Power Systems
|
KVP200H12E4-3TB Compact Package Low Switching Loss Assembled in PCB Integrated NTC temperature sensor Isolated Baseplate by Al2O3 substrate Specification Parameters TYPE T1, T4 T2, T3 Circuit Package Technology VCES Volts IC Amps VCE(SAT) Volts Ptot Watts ......
Krunter Future Tech (Dongguan) Co., Ltd.
|
STGW80H65DFB Insulated Gate Bipolar Transistor IGBT Transistor 650V 80A 469W
|
...Gate Bipolar Transistor 650V 80A 469W IGBT Transistors Applications • Photovoltaic inverters • High frequency converters Specifications Product Attribute Attribute Value Manufacturer: STMicroelectronics Product Category: IGBT Transistors Technology: Si......
Shenzhen Retechip Electronics Co., Ltd
|
IGBT CoolMOS Power Discrete Semiconductor SPW35N60C3 Transistor Mosfet IGBT N-Ch 650V 34.6A
|
Product Range IGBT CoolMOS Discrete Semiconductors SPW35N60C3 MOSFET N-Ch 650V 34.6A TO247-3 App Characteristics New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv /dt rated Ultra low effective capacitances ......
KZ TECHNOLOGY (HONGKONG) LIMITED
|
High Frequency Inverters IC Chips IGBT Transistors 650V 80A 375W STGWA60H65DFB
|
... - IGBTs - Single Manufacturer STMicroelectronics Series - Packaging Tube Part Status Active IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 240A Vce(on)...
Shenzhen Weitaixu Capacitor Co.,Ltd
|
A70QS175 4 IGBT Power Module , Semiconductor Protection Fuses 700V AC 175A
|
A70QS175-4 SEMICONDUCTOR PROTECTION FUSES 700V AC 175A , 650V DC ratin A70Q Amp-trap® Semiconductor Protection fuses were developed for inverter applications requiring extremely low I2t. A70Q fuses provide the most responsive protection for applications......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
|
IKW50N65H5FKSA1 IGBT Power Module High Performance High Reliability
|
... Collector Emitter Voltage: 650V Collector Emitter Saturation Voltage: 2.4V Operating Temperature: -40°C to 150°C Package: TO-247AC Why buy from us >>> Fast / Safely / Conveniently • ......
Shenzhen Sai Collie Technology Co., Ltd.
|
Submit your “650v igbt” inquiry in a minute :