650V-1200V IGBT Power Transistor For High Power Electronic Controls
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...Power Transistor IGBT For High-Power Electronic Controls Product Description: The High-Power IGBT is packaged in a TO-247 package type, which is ideal for high-power applications. It has a voltage rating of 650V-1200V and can operate at an application frequency of 20KHz-60KHz, making it suitable for various applications. One of the key features of the High-Power IGBT......
Guangdong Lingxun Microelectronics Co., Ltd
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IXYK110N120A4 IGBT Power Transistor 1200V 375A 1360W Through Hole TO-264
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... thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The...
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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FGH60N60SMD IGBT Power Transistor
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Fgh60n60sfd Igbt Power Transistor 60a 600v To247 Igbt Transistors Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom......
Shenzhen Retechip Electronics Co., Ltd
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Circuit Control Field Stop IGBT Power Transistor FGH60N60SMD 600V 60A
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... Parameter Distribution • RoHS compliant Applications • Solar Inverter, UPS, SMPS, PFC • Induction Heating Using Novel Field Stop IGBT Technology,...
Shenzhen Koben Electronics Co., Ltd.
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IGLT65R055B2 GaN IC GaN Bidirectional Switches 650V Bidirectional Power Transistor
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IGLT65R055B2 GaN IC GaN Bidirectional Switches 650V Bidirectional Power Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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IGBT Power Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip
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...Igbt Power Module Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip App Characteristics TJmax = 175°C • Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10 us Short Circuit Capability These are Pb−Free Devices Basic Data Product Attribute Attribute Value Manufacturer: onsemi Product Category: IGBT Transistors......
KZ TECHNOLOGY (HONGKONG) LIMITED
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Superfet 3 Audio Power Transistors , 650V NVHL040N65S3F High Power Mosfet Transistors
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Mosfet Power Transistor NVHL040N65S3F M Superfet3 650V TO247 PKG N-Channel Description SUPERFET III MOSFET is new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate ......
Shenzhen Weitaixu Capacitor Co.,Ltd
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IKW50N65H5FKSA1 IGBT Power Module High Performance High Reliability
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... Collector Emitter Voltage: 650V Collector Emitter Saturation Voltage: 2.4V Operating Temperature: -40°C to 150°C Package: TO-247AC Why buy from us >>> Fast / Safely / Conveniently • ......
Shenzhen Sai Collie Technology Co., Ltd.
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A70QS175 4 IGBT Power Module , Semiconductor Protection Fuses 700V AC 175A
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A70QS175-4 SEMICONDUCTOR PROTECTION FUSES 700V AC 175A , 650V DC ratin A70Q Amp-trap® Semiconductor Protection fuses were developed for inverter applications requiring extremely low I2t. A70Q fuses provide the most responsive protection for applications......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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MMBT5551LT1G IGBT Power Module 600mA 160V BJT Bipolar Transistors
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... IGBT Power Module 600mA 160V BJT Bipolar Transistors MMBT5551LT1G SOT-23-3 Bipolar Transistors - BJT 600mA 160V NPN Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor ......
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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