60A 650V N Channel IGBT For Energy Storage Solar String Inverter
|
60A 650V N-Channel High Power IGBT For Energy Storage Solar String Inverter MAIN CHARACTERISTICS Ic @TC=100℃ 60A VCE 650V VCE(sat)-typ 1.8V FEATURES • Trench and field-stop technology • Easy parallel switching capability APPLICATIONS • Energy storage • ......
Guangdong Lingxun Microelectronics Co., Ltd
|
Integrated Circuit Chip FGHL50T65SQDT 650V 100A 268W N−Channel IGBT Field Stop Transistors
|
Integrated Circuit Chip FGHL50T65SQDT 650V 100A 268W N−Channel IGBT Field Stop Transistors [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery ......
ShenZhen Mingjiada Electronics Co.,Ltd.
|
IGBT Power Module MBM50F12 - TOSHIBA - Silicon N-channel IGBT
|
Quick Detail: Silicon N-channel IGBT Description: Silicon N-channel IGBT Applications: * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery ......
Mega Source Elec.Limited
|
Dua Channel IGBT Driver SCALETM-2 IGBT And MOSFET Driver Core IGBT Transistor
|
Dua Channel IGBT Driver SCALETM-2+IGBT and MOSFET Driver Core Q1. What is your terms of packing? A: Generally, we pack our goods in neutral white boxes and brown cartons. If you have legally registered patent, we can pack the goods in your branded boxes......
Shenzhen Hongxinwei Technology Co., Ltd
|
MGP20N40CL Smartdiscretes Internally Clamped N Channel Igbt Switching Power Mosfet
|
MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT switching power mosfet low power mosfet This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from ......
Anterwell Technology Ltd.
|
GT20J301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
GT20J301 : N Channel ( High Power Switching Motor Control Applications ) Toshiba Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS ●The 3rd Generation ●Enhancement-Mode ●High......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
|
N Channel IGBT Integrated Circuit IC Chip STGP7NC60HD GP7NC60HD TO220 With Ultrafast Diode
|
STGP7NC60HD GP7NC60HD TO220 N-channel very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low......
Shenzhen Koben Electronics Co., Ltd.
|
Transistor 20N60COSFET IC 20N60C3 Transistor SPP20N60C3 TO-220 20A 650V N-channel Power MOSFET Transistor
|
Product Detail Manufacturer Infineon Technologies Series CoolMOS™ Packaging Tube Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 20.7A (Tc) Drive ......
Shenzhen Quanyuantong Electronics Co., Ltd.
|
NCE65T260 new spot TO-220 15A/650V N channel field effect triode
|
...
G-Resource Electronics Co.,Ltd
|
RGS80TS65HRC11 Trench Field Stop IGBT 650V 73A 272W Through Hole TO-247N
|
...IGBT Trench Field Stop 650 V 73 A 272 W Through Hole TO-247N ROHM Semiconductor RGS Field Stop Trench Automotive IGBTs ROHM Semiconductor RGS Field Stop Trench Automotive IGBTs are AEC-Q101 rated automotive IGBTs that are available in 1200V and 650V variants. These IGBTs deliver class-leading low conduction loss that contributes to reducing the size and improving the efficiency of applications. The RGS IGBTs......
HongKong Wei Ya Hua Electronic Technology Co.,Limited
|
Submit your “650v n channel igbt” inquiry in a minute :