6H-P Silicon Carbide SiC Substrate 6 Inch SIC Wafer 4H-P For Optoelectronic Devices
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... SiC, 8inch SiC, 12inch SiC, 4H-N, 4H-SEMI, 6H-N, HPSI type About P-Type SiC Substrate - support customized ones with design artwork - a hexagonal crystal (4H SiC), made by SiC monocrystal - high hardness, Mohs hardness reaches 9.2, second only to diamond....
SHANGHAI FAMOUS TRADE CO.,LTD
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6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer
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... silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices,...
Shenzhen A.N.G Technology Co., Ltd
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6 Inch 4H Silicon Carbide SiC Substrates Wafers For Device Epitaxial Growth Customized
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...)Crystal Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also...
SHANGHAI FAMOUS TRADE CO.,LTD
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6H Polytype Semi-insulating SiC Substrate , Production Grade , Epi Ready , 2”Size
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.... SiC wafer is a next generation semiconductor material with unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N...
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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SiC Substrate Wafer Manufacturer 4 inch P Grade SiC Wafer Factory
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SiC Substrate Wafer Manufacturer 4 inch P Grade SiC Wafer Factory Homray Material Technology offers silicon carbide SiC n-type and p-tpye epitaxial wafer. SiC epi wafer is mainly used for Schottky diodes, metal-oxiHomray Material Technology offersthe best price on the market for high quality SiC wafers and silicon carbide epitaxial wafers. The major products are 2 inch, 3 inch, 4 inch 6 inch silicon carbide substrate......
Homray Material Technology
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1500C CVD SIC Epitaxy Growth Furnace for Silicon Carbide Growth in 1000*1000*1500mm Effective Space
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... of the semiconductor epitaxial susceptor and etching ring. Epitaxial base, a high-purity graphite disk, with a circular groove on it to fix the wafer substrate.After placing them in the furnace, a layer of crystal film will grow on the surface of the...
Zhuzhou Ruideer Metallurgy Equipment Manufacturing Co.,Ltd
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1700V 100A Silicon Carbide Schottky Diode MSCDC100A170D1PAG Automotive IGBT Modules
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... recovery and zero forward recovery, Aluminum nitride (AlN) substrate for improved thermal performance. Specification Of MSCDC100A170D1PAG Part Number: MSCDC100A170D1PAG Speed: No Recovery Time > 500mA (Io Voltage - Forward (Vf) (......
ShenZhen Mingjiada Electronics Co.,Ltd.
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99.9% Pure SIC Ceramic Tiles / Silicon Bulletproof Ceramic Plates Boron Carbide Plates
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...SIC ceramic tiles / silicon carbide ceramic plates/ boron carbide plates used in Bulletproof Vest Silicon carbide powders are used to manufacture hard ceramics, refractories, abrasives, and composite reinforcements. Single-crystal products are as used as compounds in semiconductor substrates for high-temperature applications. Silicon carbide......
China Hunan High Broad New Material Co.Ltd
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0.3mm Thick Metalized Ceramic Substrate Zirconia ZrO2 Diamond Polished
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... 0.3mm Thick Thin Film Zirconia ZrO2 Ceramic Substrate Specification of ceramic rods: 1. Raw material: Yttria stabilized zirconia, MgO stabilized zirconia, 95~99.5% alumina, Silicon carbide (SiC) 2. Forming method: Extruding, Dry pressed, Ceramic injection......
Jinghui Industry Limited
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