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Advanced Applications Low Rds On Mosfet

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advanced applications low rds on mosfet

from 33 Products

Silicon Loss Low Rds On Mosfet For Power Consumption In Advanced Applications

China Silicon Loss Low Rds On Mosfet For Power Consumption In Advanced Applications on sale
... for different system designs. Its low Rds(ON) resistance ensures efficient power transfer, reducing power loss and heat dissipation. Our Low Voltage MOSFET is an ideal solution for applications requiring high efficiency and low power consumption....
Guangdong Lingxun Microelectronics Co., Ltd

Address: No.7,XingRong Road,ShiJie Town,Dongguan City,Guangdong Province,China

IRLZ44NPBF MOSFET Driver Chip Low RDS On Low On Resistance High Performance

China IRLZ44NPBF MOSFET Driver Chip Low RDS On Low On Resistance High Performance on sale
...MOSFET High Performance Low RDS on for Power Electronics Applications Product Description: The IRLZ44NPBF is an N-Channel MOSFET designed to provide superior performance in power management applications. This MOSFET is built using the latest in advanced power semiconductor technology and is capable of switching high voltages and currents while exhibiting low on-resistance. Key Features: • N-Channel MOSFET • Advanced......
Shenzhen Sai Collie Technology Co., Ltd.

Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

IXFK27N80Q N Channel Mosfet Transistor 800V 27A 0.32 Rds Power MOSFETs HiPerFET

China IXFK27N80Q N Channel Mosfet Transistor 800V 27A 0.32 Rds Power MOSFETs HiPerFET on sale
...Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages z Low RDS......
Shenzhen Retechip Electronics Co., Ltd

Address: Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong

High EAS Capability Low Rds(ON) Trench Process MOSFET Synchronous Rectification

China High EAS Capability Low Rds(ON) Trench Process MOSFET Synchronous Rectification on sale
Product Description: The low voltage MOSFET is a semiconductor device that has become an indispensable component in modern electronic circuits. It is designed to operate at low power levels while maintaining high efficiency and performance. The low voltage......
Reasunos Semiconductor Technology Co., Ltd.

Address: 405,4F, B2 Bldg, Tian'an Cyber Park, No.1 Huangjin Road,Nancheng District, Dongguan City, Guangdong Province

AP25N10X Mosfet Power Transistor 25A 100V TO-252 SOP-8 DC-DC Converters

China AP25N10X Mosfet Power Transistor 25A 100V TO-252 SOP-8 DC-DC Converters on sale
... switching This device is specially designed to get better ruggedness and suitable to use in Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors Mosfet Power Transistor Features VDS =100V I D =25 A RDS(ON) < 55mΩ...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province

8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge

China 8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge on sale
...MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS=4.5V ESD Rating:2000V HBM Application......
Beijing Silk Road Enterprise Management Services Co.,LTD

FDN304PZ P-Channel 1.8V Specified Power Trench MOSFET Switching Power Mosfet

China FDN304PZ  P-Channel 1.8V Specified Power Trench MOSFET Switching Power Mosfet on sale
...MOSFET switching power mosfet Features · ► –2.4 A, –20 V. RDS(ON) = 52 mW @ VGS = –4.5 V RDS(ON) = 70 mW @ VGS = –2.5 V RDS(ON) = 100 mW @ VGS = –1.8 V ► Fast switching speed ► ESD protection diode ► High performance trench technology for extremely low RDS(ON) ► SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint Applications......
Anterwell Technology Ltd.

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

500V 5A N-Channel MOSFET advanced high voltage MOSFET process AOD5N50

China 500V 5A N-Channel MOSFET advanced high voltage MOSFET process AOD5N50 on sale
...popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. Product Summary VDS 600V@150℃ D (at VGS=10V) 5A RDS(ON)...
ChongMing Group (HK) Int'l Co., Ltd

Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN

40V Integrated Circuit Chip DMT47M2SFVWQ 150°C N-Channel Enhancement Mode MOSFET

China 40V Integrated Circuit Chip DMT47M2SFVWQ 150°C N-Channel Enhancement Mode MOSFET on sale
... QG × RDS(ON) product (FOM) and low RDS(ON). The low RDS(ON) ensures that the on-state losses are minimal. This MOSFET assures reliable and robust end application due to 100% unclamped inductive switching and test in production. DMT47M2SFVWQ MOSFET is...
ShenZhen Mingjiada Electronics Co.,Ltd.

Address: 1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

0.35W N Channel 0.22A BSS138 Field Transistor Mosfets

China 0.35W N Channel 0.22A BSS138 Field Transistor Mosfets on sale
... Plastic-Encapsulate MOSFETS BSS138 N-Channel 50-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID 50 V 3.5Ω@10V 220mA 6Ω@4.5V BSS138 SOT-23 Datasheet.pdf FEATURES 1.High density cell design for extremely low RDS(on) 2.Rugged and Relaible APPLICATIONS 1.Direct Logic-......
Guangdong Huixin Electronics Technology Co., Ltd.

Address: Tianan Cyber Park, No.1 Huangjin Road, Nancheng District, Dongguan City, Guangdong Province , China

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