Motor Driver Low Gate Voltage Mosfet , Multiscene Low Vgs N Channel Mosfet
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Low Gate Voltage MOSFET with Reliable and High EAS Capability *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas, svg {......
Reasunos Semiconductor Technology Co., Ltd.
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AOD407 Low Voltage P Channel Mosfet Voltage 60V 50W Surface Mount
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AOD407 MOSFET Power Electronics Transistors 60V 50W Surface Mount P-Channel Package TO-252 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min......
Shenzhen Sai Collie Technology Co., Ltd.
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LT40P04AD TO-252 Package Low Power P Channel Mosfet For PWM Application
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... Typ LT40P04AD TO-252 1 P -40 -40 ±20 -1 -2.5 10 13 15 22 Product Description: One of the key advantages of using the Low Voltage MOSFET is its ability to improve system efficiency. This is due to its low Rds(ON)...
Guangdong Lingxun Microelectronics Co., Ltd
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Low R DS(ON) Mosfet Power Transistor Battery Protection Switch Use
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...Channel MOSFET General Description • Trench Power MOSFET technology • Low R DS(ON) • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Battery protection switch Parameters Part Number Status Package Polarity VDS (V) VGS (±V) ID (A) PD (W) RDS(ON) (mΩ max)† at VGS= VGS......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge
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...Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS=4.5V ESD Rating:2000V HBM Application Battery......
Beijing Silk Road Enterprise Management Services Co.,LTD
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SSS7N60B 600V N-Channel MOSFET power mosfet ic Field Effect Transistor
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...100% avalanche tested • Improved dv/dt capability • TO-220F package isolation = 4.0kV (Note 6) General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology....
Anterwell Technology Ltd.
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IRFR9024NTRPBF Integrated Circuit IC Chip P- Channel MOSFET 55V 11A 38W Surface Mount D- Pak
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... P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 175 mOhm @ 6.6A, 10V Vgs(th) (Max) @...
Shenzhen Koben Electronics Co., Ltd.
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IRLML6401 N Channel Mosfet SOT23-3 IRLML6401TRPBF PD 1.3W
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...Channel MOSFET SOT23-3 IRLML6401TRPBF Products Description: MOSFET; Power; P-Ch; VDSS -12V; RDS(ON) 0.05Ohm; ID -4.3A; Micro3; PD 1.3W; VGS +/-8V Trans MOSFET P-CH 12V 4.3A 3-Pin Micro T/R Transistor: P-MOSFET; unipolar; logic level; -12V; -4.3A; 1.3W These P-Channel MOSFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low......
Shenzhen Res Electronics Limited
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AON7405 30V N-Channel MOSFET 9.5mΩ Rds(on) 60A Continuous DFN5x6-8L -55°C to +175°C AEC-Q101 Qualified
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.../industrial power) 60A Continuous Current (100A pulsed): Drives high-power loads (motors, LED arrays, etc.) Ultra-Low Conduction Loss Rds(on)= 9.5m2 (Vgs=10V): Significantly reduces power dissipation Logic-Level Drive (Vgs(th)=1.8V):...
TOP Electronic Industry Co., Ltd.
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500V 5A N-Channel MOSFET advanced high voltage MOSFET process AOD5N50
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...popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. Product Summary VDS 600V@150℃ D (at VGS=10V) 5A RDS(ON)...
ChongMing Group (HK) Int'l Co., Ltd
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