JAN2N2222A Bipolar Transistors - BJT 50 V Small-Signal BJT RF Transistors
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JAN2N2222A Bipolar Transistors - BJT 50 V Small-Signal BJT Manufacturer: Microchip Product Category: Bipolar Transistors - BJT RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-18-3 Transistor Polarity: NPN Configuration: Single ......
Wisdtech Technology Co.,Limited
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2SC5200 BJT NPN Transistor 230V 15A 150W Mosfet Bipolar Transistor
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...BJT NPN Transistor 230V 15A 150W Mosfet Bipolar Transistor Power Amplifier Applications • High breakdown voltage: VCEO = 230 V (min) • Complementary to 2SA1943 • Suitable for use in 100-W high fidelity audio amplifier’s output stage Applications • power amplification Date Sheet Product Attribute Attribute Value Product Category: Bipolar Transistors - BJT Mounting Style: Through Hole Package / Case: TO-3P-3 Transistor......
Shenzhen Retechip Electronics Co., Ltd
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MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G
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MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G Bipolar (BJT) Single Transistor NPN 80V 3A 1.5W TO-225 Through Hole Most Popular Power Bipolar Transistors JANTX2N2222AUB BCP56-16T1G MJD122T4G BCX5616TA PZT2907AT1G BCP56-16 ......
Angel Technology Electronics Co
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MMBT3904LT1G LED Driver IC Chip MMBT3904L BJTS Bipolar Transistors
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...BJTS Bipolar Transistors MMBT3904LT1G,SOT-23-3,Onsemi,MMBT3904L,BJTs - Bipolar Transistors, Transistors,SMD/SMT,SOT-23-3 Product Attribute Attribute Value Manufacturer: onsemi Product Category: Bipolar Transistors - BJT Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor......
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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AD9361BBCZ High Power Rf Transistor
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...RF Power Transistor - High Power High Reliability The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide gate voltage range and excellent thermal stability. It is ideal for applications such as RF......
Shenzhen Sai Collie Technology Co., Ltd.
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BFP420H6327XTSA1 Infineon NPN Silicon RF Transistor
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..., high gain, and high-speed performance in compact packages. Key Features: Type: NPN RF Transistor Transition Frequency (ft): 25 GHz Noise Figure (NF): 0.75 dB at 2 GHz Gain (Gmax): 21 dB at 1.8 ......
Shenzhen Chive Electronics Co., Ltd.
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FLM0910-25F X- Band High Power RF Transistor FET 93.7W High Performance
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FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to ......
Shenzhen Koben Electronics Co., Ltd.
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Wide Band 700-3600MHz 20W RF Power Transistor LDMOS FETs 28V Broad-Band LDMOS RF Transistor, High Power RF Transistors
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VBE Technology Shenzhen Co., Ltd.
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BFQ67W SOT-23 Electronics Integrated Circuits Complementary Silicon NPN Planar RF Transistor
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... to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies....
ChongMing Group (HK) Int'l Co., Ltd
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Wireless Communication Module QPD0007 Single-Path 5GHz 20W 48V GaN RF Transistor
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Wireless Communication Module QPD0007 Single-Path 5GHz 20W 48V GaN RF Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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