BLF6G38S-25,112
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..., please refer to the data sheet, such as PDF files Docx documents, etc. We have BLF6G38S-25,112 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ......
Rozee Electronics Co., Ltd
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BLF6G38S-25,112
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The BLF6G38S-25,112,from Ampleon USA Inc.,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us ......
Beijing Silk Road Enterprise Management Services Co.,LTD
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BLF6G38S-25,112
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RF Mosfet 28 V 225 mA 3.4GHz ~ 3.6GHz 15dB 4.5W CDFM2...
Shenzhen Wonder-Chip Electronics Company Limited
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BLF6G38S-25,112
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RF Mosfet 28 V 225 mA 3.4GHz ~ 3.6GHz 15dB 4.5W CDFM2...
Beijing Silk Road Enterprise Management Services Co.,LTD
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SI2301CDS - T1 - E3 high power mosfet transistors P - Channel 20-V (D-S) MOSFET
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...power mosfet transistors P - Channel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) - 20 0.112 at VGS = - 4.5 V - 3.1 3.3 nC 0.142 at VGS = - 2.5 V - 2.7 TYPICAL CHARACTERISTICS 25......
Anterwell Technology Ltd.
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High Power MOSFET FDC6306P Dual P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -1.9A, 170mΩ
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High Power MOSFET FDC6306P Dual P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -1.9A, 170mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 ......
Sunbeam Electronics (Hong Kong) Limited
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SI2301CDS-T1-E3 high power mosfet transistors P - Channel 20-V (D-S) MOSFET
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...power mosfet transistors P - Channel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) - 20 0.112 at VGS = - 4.5 V - 3.1 3.3 nC 0.142 at VGS = - 2.5 V - 2.7 TYPICAL CHARACTERISTICS 25......
ChongMing Group (HK) Int'l Co., Ltd
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BLL6H0514-25,112 Field Effect Transistor Transistors FETs MOSFETs RF Chip
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...25,112 Specifications Part Status Active Transistor Type LDMOS Frequency 1.2GHz ~ 1.4GHz Gain 21dB Voltage - Test 50V Current Rating 2.5A Noise Figure - Current - Test 50mA Power - Output 25W Voltage - Rated 100V Package / Case SOT467C Supplier Device Package SOT467C Shipment UPS/EMS/DHL/FedEx Express. Condtion New original factory. BLL6H0514-25,112......
KZ TECHNOLOGY (HONGKONG) LIMITED
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BSC009NE2LSATMA1 MOSFET Power Electronics N-Channel OptiMOSTM Power-MOSFET 25V Package 8-PowerTDFN
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BSC009NE2LSATMA1 MOSFET Power Electronics N-Channel OptiMOSTM Power-MOSFET 25V Package 8-PowerTDFN FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25 V Current - Continuous Drain (Id) @ 25°C 41A (Ta), 100A (Tc) Drive ......
Shenzhen Sai Collie Technology Co., Ltd.
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IGBT Power Module IXFN27N80- IXYS Corporation - HiPerFETTM Power MOSFETs
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... Tube FET Type MOSFET N-Channel, Metal Oxide FET Feature Standard Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25° C 27A Rds On (Max) @ Id, Vgs 300 mOhm @ 13.5A, 10V Vgs(th) (Max) @...
Mega Source Elec.Limited
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