BLL6G1214LS-250,11 Field Effect Transistor Transistors FETs MOSFETs RF Chip
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BLL6G1214LS-250,11 Specifications Part Status Obsolete Transistor Type LDMOS Frequency 1.2GHz ~ 1.4GHz Gain 15dB Voltage - Test 36V Current Rating - Noise Figure - Current - Test 150mA Power - Output 250W Voltage - Rated 89V Package / Case SOT-502B Supplier Device Package SOT502B Shipment UPS/EMS/DHL/FedEx Express. Condtion New original factory. BLL6G1214LS-250,11......
KZ TECHNOLOGY (HONGKONG) LIMITED
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BLL6G1214LS-250,11
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RF Mosfet 36 V 150 mA 1.2GHz ~ 1.4GHz 15dB 250W SOT502B...
Shenzhen Wonder-Chip Electronics Company Limited
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BLL6G1214LS-250,11
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RF Mosfet 36 V 150 mA 1.2GHz ~ 1.4GHz 15dB 250W SOT502B...
Beijing Silk Road Enterprise Management Services Co.,LTD
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BLL6G1214LS-250,11
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RF Mosfet 36 V 150 mA 1.2GHz ~ 1.4GHz 15dB 250W SOT502B...
Beijing Silk Road Enterprise Management Services Co.,LTD
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2SC5200-O Power Amplifier Applications High Power Mosfet Transistors
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...mosfet transistors STOCK LIST MPC89E58AF 5910 MEGAWIN 16+ PQFP CS4398-CZZR 2234 CIRRUS 15+ TSSOP LC4064V-75TN100-10I 3070 LATTICE 15+ QFP ME0550-02DA 595 IXYS 14+ IGBT MDD26-14N1B 5902 IXYS 16+ IGBT MT9V024IA7XTM 2499 ON 15+ BGA MCC21-1408B 4756 IXYS 14+ IGBT CM100DU-24NFH 378 MITSUBI 15+ MODULE 6RI100E-080 958 FUJI 15+ MODULE PM150RSD060 250 MITSUBISH 10+ MOUDLE PK160F-160 120 SANREX 11......
Anterwell Technology Ltd.
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2N-Channel NTMFD5C470NLT1G Power MOSFET Transistor 8-DFN Integrated Circuit Chip
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...MOSFET Transistor 8-DFN Integrated Circuit Chip Product Description Of NTMFD5C470NLT1G NTMFD5C470NLT1G is Dual N-Channel 40V, 11.511.5mOhm, 36A Power MOSFET Transistors. Specification Of NTMFD5C470NLT1G Part Number NTMFD5C470NLT1G Technology MOSFET (Metal Oxide) Configuration 2 N-Channel (Dual) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 11A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs 11...
ShenZhen Mingjiada Electronics Co.,Ltd.
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BLF177 MRF150 RF MOSFET Transistors 5-150MHz 150Watts 50Volt Gain 17dB
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... W Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: 221-11-3 Packaging: Tray Brand:...
Wisdtech Technology Co.,Limited
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FDD86102 Mosfet Transistor Module High Efficiency And Reliability
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FDD86102 MOSFET Power Electronics The FDD86102 is a MOSFET power electronics device designed to provide high-efficiency power conversion. It features low on-resistance and low gate charge for superior power delivery. The device is constructed with a low-......
Shenzhen Sai Collie Technology Co., Ltd.
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BLL6H1214LS-250,11
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RF Mosfet 50 V 100 mA 1.2GHz ~ 1.4GHz 17dB 250W SOT502B...
KANG DA ELECTRONICS CO.
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STP65NF06 Power Mosfet Transistor N-channel DPAK/TO-220 Power MOSFET
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...11.5mΩ - 60A - DPAK/TO-220 STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STD65NF06 60V <14mΩ 60A STP65NF06 60V <14mΩ 60A ■ Standard level gate drive ■ 100% avalanche tested Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”™ strip-based process. The resulting transistor......
ChongMing Group (HK) Int'l Co., Ltd
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