BSS123LT1G N Channel MOSFE Enhanced FET 100V 170mA Silkscreen Patch
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...RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 170 mA Rds On - Drain-Source ......
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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BSS123LT1G N-Channel MOSFET Low 170mΩ RDS(on) 20V VDS 100V Avalanche Rated Ideal for low power switching load switching and DC-DC conversion with its SOT-23 package and ESD protection
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BSS123LT1G N-Channel MOSFET Low 170mΩ RDS(on) 20V VDS 100V Avalanche Rated Ideal for low power switching load switching and DC-DC conversion with its SOT-23 package and ESD protection Features •HBM Class 0A, MM Class M1B (Note 4) •BVSS Prefix for ......
TOP Electronic Industry Co., Ltd.
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BSS123LT1G MOSFET Power Electronics N-Channel Enhancement Mode Field Effect Transistor TO-236-3 Package Switching
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BSS123LT1G MOSFET Power Electronics N-Channel Enhancement Mode Field Effect Transistor TO-236-3 Package Switching FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 170mA (......
Shenzhen Sai Collie Technology Co., Ltd.
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BSS123LT1G Integrated Circuits (ICs) Embedded Microcontrollers
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...MFG channel. 2. We had our own More than 8000+ Different Parts stock (20% rare/obsolete +80% regular parts ) to serve our clients globally. 3. We had our own Quality evaluation system to ensure our provided parts ......
ALIXIN STOCK (HONG KONG) CO., LIMITED
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