0.35W N Channel 0.22A BSS138 Field Transistor Mosfets
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...MOSFETS BSS138 N-Channel 50-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID 50 V 3.5Ω@10V 220mA 6Ω@4.5V BSS138 SOT-23 Datasheet.pdf FEATURES 1.High density cell design for extremely low RDS(on) 2.Rugged and Relaible APPLICATIONS 1.Direct Logic-Level Interface: TTL/CMOS 2.Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors......
Guangdong Huixin Electronics Technology Co., Ltd.
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N Channel Field Effect Transistor Mosfet Discrete Semiconductors IRFS3207ZTRRPBF
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... MOSFET MOSFT 75V 170A 4.1mOhm 120nC App Characteristics Features High Efficiency Synchronous Rectification in SMPS Uninterruptible Power ......
KZ TECHNOLOGY (HONGKONG) LIMITED
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IRF7314TRPBF SOP-8 Two P-channel 20V 5.3A field effect transistors (MOSFETs)
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IRF7314TRPBF SOP-8 Two P-channel 20V 5.3A field effect transistors (MOSFETs) Specification Shipping: 1, We can shipping all over the world by DHL, UPS, FEdex, TNT and EMS. The packaging is very safe and strong. Please nitfy me you have any special needs......
Shenzhen Sai Collie Technology Co., Ltd.
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Original High Voltage Mosfet Transistor , Mosfet Driver Using Transistor
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..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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Original High Voltage Mosfet Power Transistor Mosfet Driver Using Transistor
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..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the...
Beijing Silk Road Enterprise Management Services Co.,LTD
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MBRF30100VT+ Diode Triode Transistor Mosfet Array Ic 600V 15A To247
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...Transistor Mosfet Diode Array 600V 15A To247 MBRF30100VT+ Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: standard RoHS: Details Configuration: Single Technology: Si Fall Time: 77 ns Mounting Style: Through Hole Height: 16.3 mm Package / Case: TO-220-3 Length: 10.67 mm Transistor Polarity: N-Channel Product Type: MOSFET......
ShenZhen QingFengYuan Technology Co.,Ltd.
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D2085UK 28V120W 1MHz-1000MHz Push-pull RF Power Transistor MOSFET
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...TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET......
Wisdtech Technology Co.,Limited
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Transistor Mosfet N Channel 30A 200V 75MOHM 10V MOS tube IRFP250NPBF
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Transistor MOSFET N channel 30A 200V 75MOHM 10V MOS tube IRFP250NPBF Products Description: 1.IRFP250NPBF transistor, MOSFET, N channel, 30 A, 200 V, 75 MoHM, 10 V, 4 V 2.The to-247 package is preferred for Commercial-industrial applications wherehigher ......
Shenzhen Res Electronics Limited
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PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS
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PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates......
Angel Technology Electronics Co
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Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G
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Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G PNP − MJ15023, MJ15025* Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear ......
Anterwell Technology Ltd.
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