MASTERGAN6 GaN IC 650V Enhancement Mode GaN Transistors QFN-32 Integrated Smart GaNs
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MASTERGAN6 GaN IC 650V Enhancement Mode GaN Transistors QFN-32 Integrated Smart GaNs Product Overview MASTERGAN6 GaN IC 650V Enhancement Mode GaN Transistors in QFN-32 package featuring integrated Smart GaN technology. MJD Advantage 15 years experience......
ShenZhen Mingjiada Electronics Co.,Ltd.
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1.2GHz 30W GaN Transistors Anti Drone Module RF Power Amplifier Module for Drone Defense
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.../power options. Key Features Customizable frequency range: 300MHz - 6GHz Power output customization: 5W - 200W Advanced GaN transistor technology for enhanced efficiency Compact design for easy integration into anti-drone systems...
Chongqing Miao Yi Tang Technology Co., Ltd.
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DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors
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VBE Technology Shenzhen Co., Ltd.
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CGH25120F
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...refer to the data sheet, such as PDF files Docx documents, etc. We have CGH25120F high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ......
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
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Airfast RF GaN Mosfet Power Transistor 1800 - 2200 MHz Working Frequency
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Mosfet Power Transistor A3G20S250-01SR3 Airfast RF Power GaN Transistor, 1800-2200 MHz, 45 W Avg., 48 V This 45 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz. This part is ......
Shenzhen Weitaixu Capacitor Co.,Ltd
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60W 6-8GHz 50Ω-match GaN 28V 60W Power Amplifier GaN High Electron Mobility Transistor
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60W 6-8GHz 50Ω-match GaN 28V 60W Power Amplifier GaN High Electron Mobility Transistor Product Overview YPM60800860M is a 60-watt, 50 Ω-matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, ......
Zhongshi Zhihui Technology (suzhou) Co., Ltd.
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HMC199MS8ETR Cellular RF Power Transistors For High Gain And Efficiency
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HMC199MS8ETR RF Power Transistor For High Gain And Efficiency HMC199MS8ETR RF Power Transistors Product Description: The HMC199MS8ETR is a GaN-based RF power transistor that uses the latest Gallium Nitride (GaN) technology. It is designed for use in high ......
Shenzhen Sai Collie Technology Co., Ltd.
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QPD1016 RF Mosfet 55V 1A 1.7GHz 23.9dB 500W NI-780 RF Transistors
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QPD1016 RF JFET Transistors DC-1.7 GHz 500W 50V GaN RF Tr Manufacturer: Qorvo Product Category: RF JFET Transistors RoHS: Details Transistor Type: HEMT Technology: GaN SiC Operating Frequency: DC to 1.7 GHz Gain: 23.9 dB Transistor Polarity: N-Channel Vds......
Wisdtech Technology Co.,Limited
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BSL207SP L6327 GaN field effect transistor P-Ch -20V 6A TSOP-6
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Manufacturer: Infineon Product category: GaN field effect transistor Installation style: SMD/SMT Package/box: TSOP-6 Transistor polarity: p-channel Number of channels: 1 Channel Vds- drain-source breakdown voltage: 20 V. Id- continuous drain current: 6 A ......
Shenzhen Hefengxin Technology Co., Ltd.
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650V GaN on Silicon Power Transistor HXY MOSFET HIGLD60R190D1 with RoHS Pb Free and REACH Compliance
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... as a normally-OFF power switch, it offers ultra-high switching frequency, no reverse-recovery charge, and low gate/output charge. This transistor is qualified for industrial applications according to JEDEC Standards and features ESD safeguard. It...
Hefei Purple Horn E-Commerce Co., Ltd.
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