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Cghv1j025d Gp4 Rf Transistor

1-10 Results for

cghv1j025d gp4 rf transistor

from 42 Products

CGHV1J025D Field Effect Transistor Transistors FETs MOSFETs RF Chip

China CGHV1J025D Field Effect Transistor Transistors FETs MOSFETs RF Chip on sale
CGHV1J025D Specifications Part Status Active Transistor Type HEMT Frequency 18GHz Gain 17dB Voltage - Test 40V Current Rating - Noise Figure - Current - Test 120mA Power - Output 25W Voltage - Rated 100V Package / Case Die Supplier Device Package Die Shipment UPS/EMS/DHL/FedEx Express. Condtion New original factory. CGHV1J025D......
KZ TECHNOLOGY (HONGKONG) LIMITED

Address: RM4,16/F HO KING COMM CRT 2-16 FAYUEN ST MONGKOKKL

CGHV1J025D-GP4

China CGHV1J025D-GP4 on sale
RF Mosfet 40 V 120 mA 18GHz 17dB 25W Die...
KANG DA ELECTRONICS CO.

Address: FLT A 2/F Wang Wah MANS, 59 Texaco Road, Tai Wo Hau, Tsuen Wan, NT, HongKong.

CGHV1J025D-GP4

China CGHV1J025D-GP4 on sale
RF Mosfet 40 V 120 mA 18GHz 17dB 25W Die...
Beijing Silk Road Enterprise Management Services Co.,LTD

CGHV1J025D-GP4

China CGHV1J025D-GP4 on sale
RF Mosfet 40 V 120 mA 18GHz 17dB 25W Die...
Beijing Silk Road Enterprise Management Services Co.,LTD

CGHV1J025D-GP4

China CGHV1J025D-GP4 on sale
RF Mosfet 40 V 120 mA 18GHz 17dB 25W Die...
Shenzhen Wonder-Chip Electronics Company Limited

Address: ADD:#2307.Hangyuan West Building , Zhenhua Road , Futian district , Shenzhen , China

BS816A-1 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR high power rf transistor

China BS816A-1 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR high power rf transistor on sale
...TRANSISTOR RF Transistors Manufacturer: DIODES Product Category: P-CHANNEL ENHANCEMENT RoHS: Details Mounting Style: - Package / Case: 16NSOP Packaging: Standard Unit Weight: - oz This transistor is suitable for RF power amplifiers in various applications such as wireless communication, broadcasting, and industrial RF equipment. ● P-channel enhancement mode ● DMOS transistor......
Wisdtech Technology Co.,Limited

Address: Room 1205-1207, Nanguang building, Huafu Road, Futian District, Shenzhen, Guangdong, China

AD9361BBCZ High Power Rf Transistor

China AD9361BBCZ High Power Rf Transistor on sale
...RF Power Transistor - High Power High Reliability The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide gate voltage range and excellent thermal stability. It is ideal for applications such as RF......
Shenzhen Sai Collie Technology Co., Ltd.

Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

BFP420H6327XTSA1 Infineon NPN Silicon RF Transistor

China BFP420H6327XTSA1 Infineon NPN Silicon RF Transistor on sale
..., high gain, and high-speed performance in compact packages. Key Features: Type: NPN RF Transistor Transition Frequency (ft): 25 GHz Noise Figure (NF): 0.75 dB at 2 GHz Gain (Gmax): 21 dB at 1.8 ......
Shenzhen Chive Electronics Co., Ltd.

Address: 1401, Sangda Building, No. 46 Huafa South Road, Futian District, Shenzhen, Guangdong , China

FLM0910-25F X- Band High Power RF Transistor FET 93.7W High Performance

China FLM0910-25F X- Band High Power RF Transistor FET 93.7W High Performance on sale
FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to ......
Shenzhen Koben Electronics Co., Ltd.

Address: C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031

Wide Band 700-3600MHz 20W RF Power Transistor LDMOS FETs 28V Broad-Band LDMOS RF Transistor, High Power RF Transistors

China Wide Band 700-3600MHz 20W RF Power Transistor LDMOS FETs 28V Broad-Band LDMOS RF Transistor, High Power RF Transistors on sale
...
VBE Technology Shenzhen Co., Ltd.

Address: Floor 4, Building 8, Xinwei Industrial Zone, Nanshan District, Shenzhen, Guangdong Province, China
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