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Double Side Polishing Semiconductor Sic Substrate

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double side polishing semiconductor sic substrate

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12inch Diameter 300mm SIC Substrate Epitaxial Polished Wafer Silicon Carbide Ingot Prime Grade 4H-N Type Conductive Solar Photovoltaic

China 12inch Diameter 300mm SIC Substrate Epitaxial Polished Wafer Silicon Carbide Ingot Prime Grade 4H-N Type Conductive Solar Photovoltaic on sale
...SIC Substrate Epitaxial Polished Wafer Silicon Carbide Ingot Prime Grade 4H Type Conductive Solar Photovoltaic Product introduction 12 inch SiC substrate (12-inch SiC substrate) is a large silicon carbide (SiC) wafer, mainly used in the manufacture of high-performance semiconductor devices. Silicon carbide is a wide bandgap semiconductor......
SHANGHAI FAMOUS TRADE CO.,LTD

Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799

4H N type Semi type SiC Wafer 6inch 12inch SiC Wafer SiC substrate(0001)Double Side Polished Ra≤1 nm Customization

China 4H N type Semi type SiC Wafer 6inch 12inch SiC Wafer SiC substrate(0001)Double Side Polished  Ra≤1 nm Customization on sale
...SiC Wafer 6inch(0001)Double Side Polished Ra≤1 nm Customization Description of 12 inch SiC wafer 4H N-type Semi-type SiC Wafer: 12 inch 6inch SiC wafer Silicon Carbide (SiC) wafers and substrates are specialized materials used in semiconductor technology made from silicon carbide, a compound known for its high thermal conductivity, excellent mechanical strength, and wide bandgap. Exceptionally hard and lightweight, SiC......
SHANGHAI FAMOUS TRADE CO.,LTD

Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799

6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer

China 6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer on sale
... silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices,...
Shenzhen A.N.G Technology Co., Ltd

Address: Room421, Fuquan Bldg A, Qingquan Road, Longhua District, Shenzhen,China 518109

4H Semi-Insulating SiC Substrate With Si Face Cmp Polished, Research Grade,4”Size

China 4H Semi-Insulating SiC Substrate With Si Face Cmp Polished, Research Grade,4”Size on sale
...industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N...
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Address: #506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China

Double Side Polished High-Performance Sapphire Al2O3 Crystal Substrate Ultrathin 2" 3" 4"

China Double Side Polished High-Performance Sapphire Al2O3 Crystal Substrate Ultrathin 2 3 4 on sale
Double Side Polished High-Performance Sapphire Al2O3 Crystal Substrate Ultrathin 2" 3" 4" Sapphire wafers are the epitome of modern semiconductor technology, renowned for their exceptional hardness, chemical stability, and optical transparency. These ......
Hangzhou Freqcontrol Electronic Technology Ltd.

Address: Room 1106, CIBC, No.198 Wuxing Rd, Hangzhou, P.R.China

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